COMPOSITION FOR COPPER BUMP ELECTRODEPOSITION COMPRISING A LEVELING AGENT

    公开(公告)号:US20220356592A1

    公开(公告)日:2022-11-10

    申请号:US17754110

    申请日:2020-09-15

    Applicant: BASF SE

    Abstract: Disclosed herein is a composition including copper ions and at least one additive including a polyalkyleneimine backbone including N-hydrogen atoms, where (a) the polyalkyleneimine backbone has a mass average molecular weight MW of from 600 g/mol to 100 000 g/mol, (b) the N-hydrogen atoms are each substituted by a polyoxyalkylene group including an oxyethylene and a C3 to C6 oxyalkylene unit, and (c) the average number of oxyalkylene units in the polyoxyalkylene groups is of from more than 10 to less than 30 per N-hydrogen atom in the polyalkyleneimine.

    COMPOSITION FOR TIN OR TIN ALLOY ELECTROPLATING COMPRISING SUPPRESSING AGENT

    公开(公告)号:US20210180201A1

    公开(公告)日:2021-06-17

    申请号:US17048770

    申请日:2019-04-11

    Applicant: BASF SE

    Abstract: The present invention provides an aqueous composition comprising tin ions and at least one compound of formula I wherein X1 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O or S or a C5 to C12 aromatic moiety, R11 is a copolymer of ethylene oxide and a further C3 to C6 alkylene oxide, wherein the content of ethylene oxide is from 5 to 30% by weight, R12 is selected from H, R11, R40, R13, R14, are (a) independently selected from H, R11, R40, or (b) may together form a divalent group X13; X13 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O, S or NR43; R40 is H or a linear or branched C1-C20 alkyl, R43 is selected from H, R11 and a linear or branched C1-C20 alkyl.

    Composition For Copper Electroplating On A Cobalt Seed

    公开(公告)号:US20230265576A1

    公开(公告)日:2023-08-24

    申请号:US18005171

    申请日:2021-06-30

    Applicant: BASF SE

    CPC classification number: C25D3/38

    Abstract: Described herein is an acidic aqueous composition for copper electroplating including

    (a) copper ions;
    (b) bromide ions; and
    (c) at least one additive of formula S1






    where
    XS1 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl;
    RS1 is a monovalent

    (a) poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group, or
    (b) a poly(oxyethylene)-block-poly(oxy(C3 to C6)alkylene)-block-poly(oxyethylene) group;


    RS2, RS3, RS4

    (a) are selected from the group consisting of H, RS1, RS40, or
    (b) RS3 and an adjacent group RS4 or, if n>2, two adjacent groups RS4 may together form a divalent group XS3;


    RS40 is selected from the group consisting of (a) linear or branched C1-C20 alkyl, and (b) linear or branched C1-C20 alkenyl;
    XS3 is selected from the group consisting of a linear, branched or cyclic C1-C12 alkanediyl; and
    n is an integer of from 1 to 6.

    COMPOSITION FOR TIN OR TIN ALLOY ELECTROPLATING COMPRISING SUPPRESSING AGENT

    公开(公告)号:US20210079548A1

    公开(公告)日:2021-03-18

    申请号:US16954333

    申请日:2018-12-10

    Applicant: BASF SE

    Abstract: Described herein is an aqueous composition including tin ions and at least one compound of formula I where X1, X2 are independently selected from a linear or branched C1-C12 alkanediyl, R11 is a monovalent group of formula —(O—CH2—CHR41)m—OR42, R12, R13, R14 are independently selected from H, R11, and R40; R15 is selected from H, R11, R40 and —X4—N(R21)2, X4 is a divalent group selected from (a) a linear or branched C1 to C12 alkanediyl, and (b) formula —(O—CH2—CHR41)o—, R21 is selected from R11 and R40, R40 is a linear or branched C1-C20 alkyl, R41 is selected from H and a linear or branched C1 to C5 alkyl, R42 is selected from H and a linear or branched C1-C20 alkyl, n is an integer of from 1 to 6, m is an integer of from 2 to 250, and o is an integer of from 1 to 250.

    ALKALINE COMPOSITION FOR COPPER ELECTROPLATING COMPRISING A GRAIN REFINER

    公开(公告)号:US20250051949A1

    公开(公告)日:2025-02-13

    申请号:US18720906

    申请日:2022-12-20

    Applicant: BASF SE

    Abstract: Described herein is a composition for depositing copper on a semiconductor substrate, the composition including
    (a) copper ions;
    (b) a grain refiner of formula G1a or G1b or salts thereof; (c) a complexing agent; and
    (d) optionally a buffer or a base to adjust the pH to a pH of from 7 to 13;
    wherein
    RG1 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN;
    RG2 is selected from one or more H, C1 to C4 carboxyl, C1 to C4 alkyl, C1 to C6 alkoxy, halogen, and CN; and
    XG1 is selected from C1 to 6 alkanediyl or a group —XG11—C(O)—O—XG12—;
    XG11 is selected from a chemical bond or C1 to C4 alkandiyl;
    XG12 is selected from a chemical bond or C1 to C4 alkandiyl; and wherein RG1 or RG2, comprises at least one C1 to C4 carboxyl group, or group XG1 is —XG11—C(O)—O—)—XG12—; wherein the pH of the composition is from 7 to 13.

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