Multiple element optical memory structures using fine grain ferroelectric ceramics
    1.
    发明授权
    Multiple element optical memory structures using fine grain ferroelectric ceramics 失效
    多晶元件采用精细微电子陶瓷的光学记忆结构

    公开(公告)号:US3609002A

    公开(公告)日:1971-09-28

    申请号:US3609002D

    申请日:1969-12-30

    CPC classification number: G11C13/047 G02F1/055

    Abstract: An optical image storage and display device is obtained by using the electrical polarization property of a plate of fine grain polycrystalline electrooptic ferroelectric, such as lead zirconate-lead titanate. Under the influence of an applied electric field, the polarization of a selected portion of the plate of ferroelectric locally is switched through a predetermined angle of less than or equal to 90*, if and when a scanning light beam or an electron beam is incident upon a photoconductive film deposited on the plate. Readout of the resulting permanent polarization is accomplished by means of another scanning light beam traversing the ferroelectric plate, the plate being located between a polarizer and an analyzer. Thereafter, the polarization of the plate can be switched back through an appropriate angle to its initial state (''''erased''''), by means of another applied electric field.

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