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    Code translator for use in an associative memory system
    1.
    发明授权
    Code translator for use in an associative memory system 失效
    代码转换器用于相关记忆系统

    公开(公告)号：US3609688A

    公开(公告)日：1971-09-28

    申请号：US3609688D

    申请日：1969-09-03

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： KOO JAMES T

    IPC: H03M7/04 ,  G11C15/04 ,  H04Q9/00

    CPC classification number: G11C15/04

    Abstract: A diode code translator circuit is described in which inhibiting transistors are driven by coded output signals to inhibit concurrent input signals in a predetermined priority pattern. The uninhibited input signals drive an OR gate to provide a transfer signal for gating the coded output signals. A system for cascading the code translator circuits of this invention is also shown in which the transfer signals from a plurality of the code translator circuits serve as input signals to a succeeding stage. The transfer signal from the succeeding stage serves as the gating signal. In this arrangement, the coded output signals from the plurality of code translation circuits are connected in parallel to extend the priority sequence to the cascaded system.

    Content addressable memory cell
    3.
    发明授权
    Content addressable memory cell 失效
    内容可寻址存储单元

    公开(公告)号：US3633182A

    公开(公告)日：1972-01-04

    申请号：US3633182D

    申请日：1969-08-26

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： KOO JAMES T

    IPC: G11C15/04 ,  G11C11/40 ,  G11C15/00

    CPC classification number: G11C15/04

    Abstract: A content addressable memory cell constructed from nine field effect transistors is disclosed in which the content addressing function is achieved by two of the nine field effect transistors. A memory is also disclosed to illustrate how the cell may be utilized. A second content addressable memory cell similar to the first is disclosed to show how two independent users can access the same cell.

    Abstract translation: 公开了由九个场效应晶体管构成的内容寻址存储单元，其中内容寻址功能由九个场效应晶体管中的两个实现。 还公开了一种存储器来说明如何利用单元。 公开了类似于第一内容的第二内容可寻址存储器单元，以示出两个独立用户如何访问相同的单元。

    Writing a read-only memory while protecting nonselected elements
    4.
    发明授权
    Writing a read-only memory while protecting nonselected elements 失效
    在保护非选定元素时写入只读存储器

    公开(公告)号：US3582908A

    公开(公告)日：1971-06-01

    申请号：US3582908D

    申请日：1969-03-10

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： KOO JAMES T

    IPC: G11C17/16 ,  G11C7/02 ,  G11C11/48

    CPC classification number: G11C17/16

    Abstract: A resistive read-only memory is manufactured initially with all of its resistor cross-point connections intact. Thereafter information is written into the memory by destroying selected resistor cross-point connections by applying a voltage across each row and column circuit combination uniquely defining one of the selected cross-points The voltage drives destructive current through the selected cross-points but nonselected resistor crosspoints are preserved intact by simultaneously biasing nonselected row and column circuits to respective lower voltage levels. Apparatus is also indicated for applying the aforementioned voltages.

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