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公开(公告)号：US3786321A
公开(公告)日：1974-01-15
申请号：US3786321D
申请日：1973-03-08
发明人： MATHEWS J
CPC分类号： H01J31/46 , H01J29/455 , H01L27/00
摘要： In color camera tubes having capacitance compensated indexing strips, two sets of interdigitated conductive indexing strips are placed on the cathode side of a camera tube target onto which the scene is focused. These conducting strips, which enable referencing of the electron beam position, are formed in a highly precise pattern by means of conductivity type zones formed within the semiconductor target itself. Typically, they may be fabricated by solid state diffusion or by ion implantation of a significant impurity in the same manner as is used to form the pn junction diodes which comprise the imaging means of the target. Advantageously, the conductivity type zones are covered by means of selective electrodeposition with a thin metallic plating to enhance their performance.
摘要翻译： 在具有电容补偿分度条的彩色照相机管中，将两组交错的导电分度条放置在相机管目标的阴极侧，场景被聚焦到该目标上。 通过形成在半导体目标本身内的导电类型区，能够以高精度图案形成能够参照电子束位置的这些导电条。 通常，它们可以通过固态扩散或通过与用于形成包含靶的成像装置的p-n结二极管相同的方式离子注入有效杂质来制造。 有利地，通过用薄金属电镀的选择性电沉积来覆盖导电类型区域以增强其性能。
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2.发明授权
公开(公告)号：US3717790A
公开(公告)日：1973-02-20
申请号：US3717790D
申请日：1971-06-24
摘要： The specification describes processes using ion implantation for preparing silicon diode array targets for video camera tubes. Bulk silicon prepared in the conventional way has sufficient nonuniformity over the target area to produce contrast patterns in the video output. This effect can be eliminated by initially preparing high resistivity bulk material and implanting the bulk impurities to obtain the desired bulk resistivity. Advantageous procedures for implanting the diodes are also described.
摘要翻译： 该说明书描述了使用离子注入来制备用于摄像机管的硅二极管阵列靶的工艺。 以常规方式制备的散装硅在目标区域上具有足够的不均匀性，以在视频输出中产生对比度图案。 通过初始制备高电阻率散装材料并植入大块杂质以获得所需的体电阻率，可以消除这种影响。 还描述了用于注入二极管的有利程序。
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