公开(公告)号：US11976354B2

公开(公告)日：2024-05-07

申请号：US17637064

申请日：2020-12-29

申请人： BOCHVAR HIGH-TECHNOLOGY RESEARCH INSTITUTE FOR INORGANIC MATERIALS

发明人： Leonid Aleksandrovich Karpyuk ,  Vladislav Konstantinovich Orlov ,  Sergey Igorevich Ivanov ,  Alexey Vladimirovich Glebov ,  Fyodor Viktorovich Makarov ,  Roman Gennadyevich Zakharov ,  Ivan Alexandrovich Dzyubinsky ,  Alexander Pavlovich Ponomarenko ,  Alexander Dmitrievich Bagdatyev

IPC分类号： C23C16/32 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C23C16/01 ,  C23C16/26 ,  D04C1/02 ,  D04C1/12 ,  G21C3/07

CPC分类号： C23C16/325 ,  C04B41/009 ,  C04B41/4531 ,  C04B41/5001 ,  C04B41/5059 ,  C04B41/522 ,  C04B41/87 ,  C23C16/01 ,  C23C16/26 ,  D04C1/02 ,  D04C1/12 ,  G21C3/07 ,  D10B2101/16 ,  D10B2505/02 ,  Y10T29/49982

摘要： The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

公开(公告)号：US11959192B2

公开(公告)日：2024-04-16

申请号：US17620732

申请日：2020-12-29

申请人： BOCHVAR HIGH-TECHNOLOGY RESEARCH INSTITUTE FOR INORGANIC MATERIALS

发明人： Leonid Aleksandrovich Karpyuk ,  Vladislav Konstantinovich Orlov ,  Sergey Igorevich Ivanov ,  Alexey Vladimirovich Glebov ,  Fyodor Viktorovich Makarov ,  Roman Gennadyevich Zakharov ,  Ivan Alexandrovich Dzyubinsky ,  Alexander Pavlovich Ponomarenko ,  Dmitry Vladimirovich Zhigalov ,  Alexander Pavlovich Korolev ,  Artem Andreevich Vorobyov

IPC分类号： D01D5/088 ,  C01B32/977 ,  D01F9/08

CPC分类号： D01D5/088 ,  C01B32/977 ,  D01F9/08

摘要： The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.