公开(公告)号：US20240343589A1

公开(公告)日：2024-10-17

申请号：US18515107

申请日：2023-11-20

申请人： Pallidus, Inc.

发明人： Douglas M. Dukes ,  Andrew R. Hopkins ,  Walter J. Sherwood ,  Ashish P. Diwanji ,  Glenn Sandgren ,  Mark S. Land ,  Brian L. Benac

IPC分类号： C01B32/956 ,  C01B32/40 ,  C01B32/50 ,  C01B32/977 ,  C04B35/56 ,  C04B35/571 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C08G77/00 ,  C08G77/12 ,  C09K8/80

CPC分类号： C01B32/956 ,  C01B32/40 ,  C01B32/50 ,  C01B32/977 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/571 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/80 ,  C09K8/80

摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

公开(公告)号：US12030819B2

公开(公告)日：2024-07-09

申请号：US17367380

申请日：2021-07-04

申请人： Pallidus, Inc.

发明人： Douglas M. Dukes ,  Ashish P. Diwanji ,  Andrew R. Hopkins ,  Walter J. Sherwood ,  Glenn Sandgren ,  Mark S. Land ,  Brian L. Benac

IPC分类号： C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/571 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/00 ,  C08L83/04 ,  C08G77/00 ,  C08G77/12

CPC分类号： C04B35/571 ,  C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/00 ,  C08L83/04 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/94 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/80 ,  C08L83/04 ,  C08L83/00

摘要： Materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. Doped SiOC and SiC materials for providing semiconductor properties to SiC wafers, including p- and n-type properties.

公开(公告)号：US20230183075A1

公开(公告)日：2023-06-15

申请号：US17995903

申请日：2021-04-13

申请人： The University of Chicago

发明人： Bozhi Tian ,  Vishnu Nair ,  Aleksander Prominski

IPC分类号： C01B32/977 ,  C01B32/205 ,  C23C30/00

CPC分类号： C01B32/977 ,  C01B32/205 ,  C23C30/00

摘要： Compositions and methods directed to the synthesis and use of silicon carbide with, biomedical applications is provided. The method of synthesis includes providing a polydimethysiloxane (PDM'S) substrate, and irradiating at least a portion of the substrate with a laser under conditions sufficient to produce silicon carbide comprising 3C silicon carbide (3C-SiE). The composition can be used to modulate biological activity through electrical, chemical and heat stimuli.

公开(公告)号：US12043748B2

公开(公告)日：2024-07-23

申请号：US17030475

申请日：2020-09-24

申请人： Raytheon Technologies Corporation

发明人： Wayde R. Schmidt

IPC分类号： C09D11/10 ,  B28B1/00 ,  B29C64/124 ,  B33Y10/00 ,  B33Y70/00 ,  C01B32/977 ,  C08G77/20 ,  C09D11/101 ,  C09D11/102 ,  B29K83/00

CPC分类号： C09D11/101 ,  B28B1/001 ,  B29C64/124 ,  B33Y10/00 ,  B33Y70/00 ,  C01B32/977 ,  C08G77/20 ,  C09D11/102 ,  B29K2083/00

摘要： A photo-curable liquid composition for additive manufacturing of silicon-containing carbide ceramic includes a polymethylvinylsilane (PMVS) resin that has photo-reactivity over a first photo-wavelength absorption range and a photo-initiator additive mixed with the PMVS resin. The photo-initiator additive has photo-reactivity over a second photo-wavelength absorption range that has an overlapping wavelength range with the first photo-wavelength absorption range. The PMVS and the photo-initiator additive are reactive to polymerize upon exposure to radiation having a wavelength in the overlapping wavelength range.

公开(公告)号：US20240190710A1

公开(公告)日：2024-06-13

申请号：US18214324

申请日：2023-06-26

申请人： Pallidus, Inc.

发明人： Mark S. Land

IPC分类号： C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/571 ,  C04B35/80 ,  C08G77/00 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C23C14/06 ,  C30B25/02 ,  C30B29/36

CPC分类号： C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/571 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C23C14/0635 ,  C30B25/02 ,  C30B29/36 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3895 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/80

摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

公开(公告)号：US20240044045A1

公开(公告)日：2024-02-08

申请号：US18266260

申请日：2021-12-13

申请人： Zadient Technologies SAS

发明人： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC分类号： C30B35/00 ,  C23C16/32 ,  C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  C30B23/06 ,  C30B23/00 ,  C30B29/36 ,  C01B32/977

CPC分类号： C30B35/007 ,  C23C16/325 ,  C23C16/46 ,  C23C16/52 ,  C23C16/4412 ,  C30B23/06 ,  C30B23/005 ,  C30B29/36 ,  C01B32/977 ,  C01P2006/11 ,  C01P2006/80

摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

公开(公告)号：US20240035153A1

公开(公告)日：2024-02-01

申请号：US18266264

申请日：2021-12-13

申请人： Zadient Technologies SAS

发明人： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC分类号： C23C16/32 ,  C23C16/46 ,  C23C16/455 ,  C23C16/52 ,  C30B23/02 ,  C30B35/00 ,  C01B32/977

CPC分类号： C23C16/325 ,  C23C16/46 ,  C23C16/45512 ,  C23C16/52 ,  C30B23/02 ,  C30B35/007 ,  C01B32/977 ,  C01P2006/10 ,  C01P2006/80

摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g. 1)

公开(公告)号：US11685662B2

公开(公告)日：2023-06-27

申请号：US16946325

申请日：2020-06-17

申请人： Touchstone Research Laboratory, Ltd.

发明人： Dwayne R. Morgan ,  Frederick H. Wade

IPC分类号： C01B32/977

CPC分类号： C01B32/977

摘要： A method for producing silicon carbide directly from comminuted coal and a silicon precursor is described. The process includes coating comminuted coal with a silicon precursor and heating the silicon precursor coated comminuted coal to initially form polymerized preceramic silicon-carbon foam and then further heating to form silicon carbide foam.

公开(公告)号：US11959192B2

公开(公告)日：2024-04-16

申请号：US17620732

申请日：2020-12-29

申请人： BOCHVAR HIGH-TECHNOLOGY RESEARCH INSTITUTE FOR INORGANIC MATERIALS

发明人： Leonid Aleksandrovich Karpyuk ,  Vladislav Konstantinovich Orlov ,  Sergey Igorevich Ivanov ,  Alexey Vladimirovich Glebov ,  Fyodor Viktorovich Makarov ,  Roman Gennadyevich Zakharov ,  Ivan Alexandrovich Dzyubinsky ,  Alexander Pavlovich Ponomarenko ,  Dmitry Vladimirovich Zhigalov ,  Alexander Pavlovich Korolev ,  Artem Andreevich Vorobyov

IPC分类号： D01D5/088 ,  C01B32/977 ,  D01F9/08

CPC分类号： D01D5/088 ,  C01B32/977 ,  D01F9/08

摘要： The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.

公开(公告)号：US11859309B2

公开(公告)日：2024-01-02

申请号：US16479551

申请日：2019-05-22

申请人： DS TECHNO CO., LTD.

发明人： Hak Jun Ahn ,  Young Ju Kim ,  Youn Woong Jung ,  Kang Suk Kim ,  Jun Baek Song ,  Won Geun Son

IPC分类号： C30B29/36 ,  C23C16/32 ,  C30B25/02 ,  H01L21/02 ,  C01B32/977 ,  C01B32/956

CPC分类号： C30B29/36 ,  C01B32/977 ,  C23C16/325 ,  C30B25/02 ,  H01L21/0262 ,  H01L21/02529 ,  C01B32/956 ,  H01L21/02274

摘要： In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.