公开(公告)号：US20170044659A1

公开(公告)日：2017-02-16

申请号：US15138811

申请日：2016-04-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianming SUN ,  Ben NIU ,  Zhi WANG ,  Xiang ZHOU

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/08

CPC classification number: C23C14/352 ,  C23C14/225 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/3455

Abstract: The present invention relates to a magnetron sputtering device, which comprises at least two targets, each of which is used for placing a target material for sputtering a film forming area of a same substrate; and magnetic field generating devices corresponding to the targets respectively and used for generating magnetic fields for controlling the directions of target sputtering particles. The magnetron sputtering device comprises at least two targets, and the target materials of the at least two targets are different from each other in composition, so that the purpose of doping different elements can be achieved by adjusting the proportion of the two target materials; by controlling the magnetic fields generated by the magnetic field generating devices, the sputtering speed and direction of the target materials can be controlled. The present invention also relates to a method for forming a film on a substrate by magnetron sputtering.

Abstract translation: 磁控管溅射装置技术领域本发明涉及一种磁控管溅射装置，其包括至少两个靶，每个靶用于放置用于溅射相同基板的成膜区域的靶材料; 和分别对应于目标的磁场产生装置，用于产生用于控制靶溅射颗粒的方向的磁场。 所述磁控管溅射装置至少包含两个靶，并且所述至少两个靶的目标材料的组成彼此不同，从而可以通过调节两种靶材料的比例来实现掺杂不同元素的目的。 通过控制由磁场产生装置产生的磁场，可以控制溅射速度和目标材料的方向。 本发明还涉及通过磁控溅射在基板上形成膜的方法。