Methods for fabricating thin film transistor and array substrate, array substrate and display device

    公开(公告)号:US10192900B2

    公开(公告)日:2019-01-29

    申请号:US15112275

    申请日:2015-12-17

    发明人: Jiaxiang Zhang Kai Lu

    摘要: Methods for fabricating a thin film transistor and an array substrate, an array substrate and a display device are provided, and the fabrication method of a thin film transistor includes: forming a first photoresist pattern on the active layer film, wherein the first photoresist pattern comprises a photoresist area of a first thickness and a photoresist area in a second thickness; etching the active layer film by using the first photoresist pattern as a mask to form an active layer; ashing the first photoresist pattern to remove the photoresist area of the second thickness and to reduce a thickness of the photoresist area of the first thickness to form the second photoresist pattern. The second photoresist pattern is used as the mask to etch the source-drain electrode thin film. The fabrication method uses the photoresist pattern to prevent the active layer from being impacted by a source-drain etching solution, and can reduce the usage of a specific etching barrier layer and greatly simplify the fabrication process.

    TOUCH PANEL AND ELECTRONIC DEVICE

    公开(公告)号:US20220308700A1

    公开(公告)日:2022-09-29

    申请号:US17309654

    申请日:2020-08-18

    IPC分类号: G06F3/044 G06F3/041

    摘要: Disclosed are a touch panel and an electronic device, the touch panel is provided with a touch area and a non-touch area surrounding the touch area, a plurality of first touch electrodes and a plurality of second touch electrodes are all located in the touch area, a plurality of connecting portions include a first connecting portion, a second connecting portion, and a third connecting portion sequentially away from the non-touch area in a first direction, and a distance between a center of an orthographic projection of the first connecting portion on a substrate and a center of an orthographic projection of the second connecting portion on the substrate is less than a distance between the center of the orthographic projection of the second connecting portion on the substrate and a center of an orthographic projection of the third connecting portion on the substrate.