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公开(公告)号：US11362072B2
公开(公告)日：2022-06-14
申请号：US16904584
申请日：2020-06-18
发明人： Li Qiang , Zhaohui Qiang , Tao Yang , Dongsheng Yin
IPC分类号： H01L33/00 , H01L25/075 , H01L25/16
摘要： A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.
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2.发明授权公开(公告)号：US11996413B2
公开(公告)日：2024-05-28
申请号：US17413221
申请日：2020-06-09
发明人： Zhaohui Qiang , Li Qiang , Chao Luo , Huiqin Zhang , Rui Huang , Zhi Wang
IPC分类号： H01L27/12 , H01L29/423 , H01L29/786 , G02F1/1362 , G02F1/1368 , H10K59/121
CPC分类号： H01L27/1222 , H01L27/1248 , H01L27/127 , H01L29/42384 , H01L29/78696 , G02F1/13624 , G02F1/1368 , H10K59/1213
摘要： A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.
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公开(公告)号：US11973094B2
公开(公告)日：2024-04-30
申请号：US17290495
申请日：2020-09-23
发明人： Tianmin Zhou , Rui Huang , Wei Yang , Lizhong Wang , Zhaohui Qiang , Tao Yang , Li Qiang
IPC分类号： H01L27/146 , G06V40/13 , H10K59/12 , H10K59/65 , H10K71/00
CPC分类号： H01L27/14616 , G06V40/1318 , H01L27/14603 , H01L27/14692 , H10K59/65 , H10K71/00 , H10K59/12 , H10K59/1201
摘要： The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.
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