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公开(公告)号:US20240274674A1
公开(公告)日:2024-08-15
申请号:US18021778
申请日:2022-03-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Niangi YAO , Kun ZHAO , Feifei LI
IPC: H01L29/417 , H01L29/423
CPC classification number: H01L29/41733 , H01L29/42384
Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.
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公开(公告)号:US20220077264A1
公开(公告)日:2022-03-10
申请号:US17468638
申请日:2021-09-07
Inventor: Dapeng XUE , Guangcai YUAN , Xiaochun XU , Zheng LIU , Liangliang LI , Shuilang DONG , Lizhong WANG , Niangi YAO
IPC: H01L27/32
Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.
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