THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20240274674A1

    公开(公告)日:2024-08-15

    申请号:US18021778

    申请日:2022-03-31

    CPC classification number: H01L29/41733 H01L29/42384

    Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

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