公开(公告)号：US20170194363A1

公开(公告)日：2017-07-06

申请号：US15238970

申请日：2016-08-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yinghai MA ,  Liangjian LI ,  Yueping ZUO

IPC: H01L27/12 ,  H01L21/311 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L21/31116 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78621

Abstract: A manufacturing method of an array substrate comprises: forming a source and a drain of a thin film transistor on a base; forming a first insulation layer; forming an active layer of the thin film transistor; forming a second insulation layer; forming a first via hole and a second via hole in the first insulation layer and the second insulation layer above the source and the drain, by etching, and forming a third via hole and a fourth via hole in the second insulation layer above the active layer, by etching; forming a first connection line connecting the source with the active layer through the first via hole and the third via hole, a second connection line connecting the drain with the active layer and the pixel electrode through the second via hole and the fourth via hole and a pixel electrode.

公开(公告)号：US20190058152A1

公开(公告)日：2019-02-21

申请号：US15779957

申请日：2017-09-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yinghai MA ,  Yueping ZUO

IPC: H01L51/52 ,  H01L51/56

Abstract: The present disclosure provides a substrate for a display panel, manufacturing method thereof, a display panel and encapsulation method. The substrate includes a carrier substrate and at least one auxiliary encapsulation component disposed on the carrier substrate. A protrusion is formed at aside of the auxiliary encapsulation component away from the carrier substrate and protrudes in the direction parallel to the surface of the carrier substrate. The substrate for a display panel, manufacturing method thereof, the display panel and the encapsulation method provided by the present disclosure improve the adhesion of the encapsulation, thus prolonging the lifetime of product.

公开(公告)号：US20180233376A9

公开(公告)日：2018-08-16

申请号：US15546475

申请日：2016-04-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yinghai MA ,  Liangjian LI ,  Yueping ZUO

IPC: H01L21/311 ,  H01L21/768 ,  H01J37/32

CPC classification number: H01L21/31116 ,  G02F1/1368 ,  G02F2202/104 ,  H01J37/3244 ,  H01J37/32871 ,  H01J2237/334 ,  H01J2237/3347 ,  H01L21/76805 ,  H01L27/1259

Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.

公开(公告)号：US20180025915A1

公开(公告)日：2018-01-25

申请号：US15546475

申请日：2016-04-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yinghai MA ,  Liangjian LI ,  Yueping ZUO

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/768

CPC classification number: H01L21/31116 ,  G02F1/1368 ,  G02F2202/104 ,  H01J37/3244 ,  H01J37/32871 ,  H01J2237/334 ,  H01J2237/3347 ,  H01L21/76805 ,  H01L27/1259

Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.