METHOD FOR MANUFACTURING DISPLAY SUBSTRATE
    1.
    发明公开

    公开(公告)号:US20230163200A1

    公开(公告)日:2023-05-25

    申请号:US17771720

    申请日:2021-03-08

    CPC classification number: H01L29/6675 H01L29/78696 H01L29/78672

    Abstract: A method for manufacturing a display substrate is provided. The method includes: forming a first active layer arranged in the NMOS transistor region and a second active layer arranged in the PMOS transistor region on the base substrate; coating one side, facing away from the base substrate, of the first active layer and one side, facing away from the base substrate, of the second active layer with a first photoresist layer, forming a first pattern layer by patterning the first photoresist layer to expose at least two ends of the first active layer; forming N-type heavily doped regions by performing N-type heavy doping on the two ends of the first active layer with the first pattern layer as a mask; forming a second pattern layer by processing the first pattern layer to expose at least a middle region of the first active layer.

    DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

    公开(公告)号:US20230018774A1

    公开(公告)日:2023-01-19

    申请号:US17626765

    申请日:2021-03-10

    Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and a plurality of pixels arranged on the base substrate, each pixel includes a plurality of sub-pixels, and each sub-pixel includes a first active layer, a first gate insulation layer, a gate electrode, a second gate insulation layer, a second active layer, a first insulation layer, a source electrode and a drain electrode laminated one on another. The source electrode is connected with the first active layer through a via hole penetrating through the first insulation layer, the second gate insulation layer and the first gate insulation layer, and the source electrode and the drain electrode are connected with the second active layer through a via hole penetrating through the first insulation layer.

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