公开(公告)号：US20040072420A1

公开(公告)日：2004-04-15

申请号：US10271646

申请日：2002-10-15

Applicant: Brewer Science, Inc

Inventor： Tomoyuki Enomoto ,  Keisuke Nakayama ,  Rama Puligadda

IPC: H01L021/44

CPC classification number: G03F7/091 ,  Y10T428/31938

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

Abstract translation: 本发明涉及一种抗反射涂料组合物，其特征在于包含由具有至少两个氮原子取代羟甲基和/或烷氧基甲基的三嗪化合物制成的树脂，以及光吸收化合物和/或光吸收树脂。 本发明提供了一种用于抗反射涂层的抗反射涂层组合物，其在制备半导体器件时用于光刻工艺的光具有高的光吸收特性，显示出高的防反射光效果，在更薄的膜厚度下使用 并且与光致抗蚀剂层相比具有更大的干蚀刻速率。

公开(公告)号：US20030234387A1

公开(公告)日：2003-12-25

申请号：US10310099

申请日：2002-12-03

Applicant: Brewer Science, Inc.

Inventor： Rama Puligadda ,  James E. Lamb III ,  Tony D. Flaim

IPC: G03C001/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08G59/3218 ,  C08J7/047 ,  C08J2425/00 ,  C08J2433/00 ,  C08J2471/00 ,  C09D163/00 ,  H01L21/0276 ,  H01L21/31144 ,  C08L2666/16

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted ring members. In another embodiment, the polymers further comprise recurring monomers comprising ring members reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract translation: 提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。 在一个实施方案中，组合物包括包含具有未反应的环成员的重复单体的聚合物。 在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环成员的重复单体。 组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

公开(公告)号：US20030065164A1

公开(公告)日：2003-04-03

申请号：US10003558

申请日：2001-10-24

Applicant: BREWER SCIENCE, INC.

Inventor： Rama Puligadda ,  Runhui Huang

IPC: C08B013/00 ,  C08B003/22 ,  C08B011/00 ,  C08F008/00 ,  C08G018/00

CPC classification number: H04B1/403 ,  C08L61/28 ,  G02B1/111 ,  H04B1/30

Abstract: Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., nullCH2null, nullCH2nullOnullCH2null) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values and can be formulated for both conformal and planar applications.