Multiwafer electrical circuit construction and method of making
    1.
    发明授权
    Multiwafer electrical circuit construction and method of making 失效
    多层电路电路结构及其制作方法

    公开(公告)号:US3917983A

    公开(公告)日:1975-11-04

    申请号:US41510273

    申请日:1973-11-12

    Applicant: BUNKER RAMO

    Abstract: A construction and method of fabricating a multiwafer electrical circuit structure comprised of a plurality of malleable electrically conductive wafers providing X, Y and Z coaxial connections. The wafers are stacked together under pressure with deformable integral malleable contacts being provided between adjacent wafers for providing wafer-to-wafer Z-axis electrical connections as well as wafer-to-wafer ground connections. The wafers are fabricated from conductive sheets of appropriate malleability in a manner so that the deformable integral malleable Z-axis and ground contacts required between adjacent wafers are fabricated directly from the wafer material.

    Abstract translation: 一种制造多晶片电路结构的结构和方法,包括提供X,Y和Z同轴连接的多个可延展的导电晶片。 晶片在压力下堆叠在一起,可变形的整体可延展的触点设置在相邻晶片之间,用于提供晶圆到晶片的Z轴电连接以及晶圆到晶片的接地连接。 晶片由具有合适延展性的导电片制成,使得相邻晶片之间所需的可变形的整体可延展的Z轴和接地触点直接从晶片材料制造。

Patent Agency Ranking