公开(公告)号：US20060154185A1

公开(公告)日：2006-07-13

申请号：US11033647

申请日：2005-01-11

申请人： Bang-Chein Ho ,  Jian-Hong Chen

发明人： Bang-Chein Ho ,  Jian-Hong Chen

IPC分类号： G03F7/40

CPC分类号： G03F7/40

摘要： A method for reducing a critical dimension of a photoresist pattern while improving a line spacing between distal end portions of pattern lines wherein the method includes providing a substrate including an overlying resist; exposing the resist to an activating light source; baking the resist in a first baking process followed by developing the resist in a first development process to form a first resist pattern; then baking the first resist pattern in a second baking process followed by developing the first resist pattern in a second development process to form a second resist pattern having reduced dimensions; and, then dry trimming the second resist pattern to form a final resist pattern with reduced dimensions compared to the second resist pattern.

摘要翻译： 一种降低光致抗蚀剂图案的临界尺寸的方法，同时改善图案线的远端部分之间的线间距，其中该方法包括提供包括上覆抗蚀剂的基底; 将抗蚀剂暴露于活化光源; 在第一烘烤过程中烘烤抗蚀剂，然后在第一显影过程中显影抗蚀剂以形成第一抗蚀剂图案; 然后在第二烘烤过程中烘烤第一抗蚀剂图案，随后在第二显影过程中显影第一抗蚀剂图案，以形成尺寸减小的第二抗蚀剂图案; 然后干燥修整第二抗蚀剂图案以形成与第二抗蚀剂图案相比尺寸减小的最终抗蚀剂图案。

公开(公告)号：US20050130410A1

公开(公告)日：2005-06-16

申请号：US10737024

申请日：2003-12-16

申请人： Dahchung Oweyang ,  Jian-Hong Chen ,  Bang-Chein Ho

发明人： Dahchung Oweyang ,  Jian-Hong Chen ,  Bang-Chein Ho

IPC分类号： G03F1/14 ,  G03F7/00 ,  H01L21/027 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/76816 ,  G03F1/70 ,  G03F7/0035 ,  H01L21/0274

摘要： A method is provided for the creation of contact holes. The invention provides two masks. The first mask, referred to as the packed mask, comprises the desired contact holes, which are part of the creation of a semiconductor device. To the packed mask are added padding holes in order to increase the hole density of the packed mask. An insulation layer is formed to protect the first layer of material. The second mask, referred to an the unpacking mask, comprises openings at the same locations as the locations of the padding holes of the first mask, the openings provided in the second mask have slightly larger dimensions than the padding holes of the first mask. A first exposure is made using the packed mask, a second exposure of the same surface area is made using the unpacking mask. The unpacking mask is used to selectively cover the padding contact holes, resulting in the final image. Two types of unpacking masks can be used, a first type having unpacking holes that surround the desired hole pattern, a second type having unpacking holes that align with the desired hole pattern.

摘要翻译： 提供了一种创建接触孔的方法。 本发明提供了两个掩模。 称为包装掩模的第一掩模包括期望的接触孔，这是半导体器件的创建的一部分。 为了增加包装面罩的孔密度，向包装的面膜中加入填充孔。 形成绝缘层以保护第一层材料。 第二掩模（称为开封掩模）包括与第一掩模的填充孔的位置相同位置处的开口，设置在第二掩模中的开口具有比第一掩模的填充孔稍大的尺寸。 使用包装掩模进行第一次曝光，使用开封掩模进行相同表面积的第二次曝光。 打开包装的面罩用于选择性地覆盖填充接触孔，产生最终的图像。 可以使用两种类型的开封掩模，第一类型具有围绕所需孔图案的开封孔，第二类型具有与期望的孔图案对准的开封孔。

公开(公告)号：US06207779B1

公开(公告)日：2001-03-27

申请号：US09213938

申请日：1998-12-17

申请人： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Tai-Sheng Yeh ,  Jui-Fa Chang

发明人： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Tai-Sheng Yeh ,  Jui-Fa Chang

IPC分类号： C08F23208

CPC分类号： C08G61/08 ,  Y10S526/916

摘要： The present invention provides a ring-opened polymer, which is prepared by reacting at least one pericyclic olefin elected from those represented by formulae (I) and (II) through ring-opening metathesis polymerization wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur,  —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl; each R is independently selected from hydrogen, halogen, and C1-20 alkyl; and each n is an integer from 1 to 6.

摘要翻译： 本发明提供一种开环聚合物，其通过使由式（I）和（II）表示的那些所选择的至少一种环氧烯烃通过开环易位聚合反应制备，其中A和B可以相同或不同，并且独立地 选自卤素，氢，C 3-20环状或环脂族烷基，C 1-20直链和支链烷基，C6-20芳基，C7-20芳基烷基，C7-20烷基芳基，甲硅烷基，烷基甲硅烷基，甲基，烷基锗烷基，烷氧基羰基 ，酰基和杂环基团; 或者A和B连接在一起形成C3-20饱和或不饱和环状烃基或取代或未取代的杂环基; C选自氧，硫，-CH 2 - 和-SiH 2 - ，其中 每个R 1独立地选自C 1-20烷基和苯基;每个R独立地选自氢，卤素和C 1-20烷基; 而且n是1到6的整数。

公开(公告)号：US07972957B2

公开(公告)日：2011-07-05

申请号：US11363860

申请日：2006-02-27

申请人： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

发明人： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

IPC分类号： H01L21/44

CPC分类号： H01L21/76816 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76838 ,  H01L21/76885

摘要： A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material.

摘要翻译： 一种制造半导体器件的方法，包括在待蚀刻的第一层上形成第一牺牲层，所述第一牺牲层具有通过其形成的多个开口，暴露出所述第一层的一部分; 在所述第一牺牲层上形成第一光致抗蚀剂层并填充通过所述第一牺牲层形成的所述多个开口; 在所述第一光致抗蚀剂层中形成多个开口，所述第一光致抗蚀剂层中的所述多个开口中的每一个覆盖所述第一牺牲层中的所述开口之一，并且其中所述第一牺牲层中的每个开口具有较小的横截面积， 第一光致抗蚀剂层中的覆盖开口的横截面积; 以及通过所述第一光致抗蚀剂层和所述第一牺牲层中的所述开口蚀刻所述第一层，包括将所述第一层暴露于蚀刻材料。

公开(公告)号：US20070202690A1

公开(公告)日：2007-08-30

申请号：US11363860

申请日：2006-02-27

申请人： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

发明人： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76816 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76838 ,  H01L21/76885

摘要： A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material

摘要翻译： 一种制造半导体器件的方法，包括在待蚀刻的第一层上形成第一牺牲层，所述第一牺牲层具有通过其形成的多个开口，暴露出所述第一层的一部分; 在所述第一牺牲层上形成第一光致抗蚀剂层并填充通过所述第一牺牲层形成的所述多个开口; 在所述第一光致抗蚀剂层中形成多个开口，所述第一光致抗蚀剂层中的所述多个开口中的每一个覆盖所述第一牺牲层中的所述开口之一，并且其中所述第一牺牲层中的每个开口具有较小的横截面积， 第一光致抗蚀剂层中的覆盖开口的横截面积; 以及通过所述第一光致抗蚀剂层和所述第一牺牲层中的所述开口蚀刻所述第一层，包括将所述第一层暴露于蚀刻材料

公开(公告)号：US06900134B1

公开(公告)日：2005-05-31

申请号：US10803208

申请日：2004-03-18

申请人： Jen-Chieh Shih ,  Jian-Hong Chen ,  Bang-Chein Ho

发明人： Jen-Chieh Shih ,  Jian-Hong Chen ,  Bang-Chein Ho

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/3086 ,  G03F7/0035 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/3081

摘要： A method and system is disclosed for selectively forming a pattern for making openings in a substrate. A first set of openings are formed in a first photoresist layer coated on the substrate using a first mask. A developing bottom antireflective coating (BARC) layer is then formed over the first photoresist with the openings filled therewith. A second photoresist layer is formed over the BARC layer. A second set of openings are formed in the second photoresist layer using a second mask exposing the BARC layer directly underneath. The exposed part of the BARC layer is then removed. Subsequently, one or more openings of the first set in the first photoresist layer, after the exposed part of the BARC layer filled therein is removed, are used for forming the openings in the substrate.

摘要翻译： 公开了用于选择性地形成用于在基板中形成开口的图案的方法和系统。 使用第一掩模在涂覆在基板上的第一光致抗蚀剂层中形成第一组开口。 然后在第一光致抗蚀剂上形成显影底部抗反射涂层（BARC）层，其中填充有开口。 在BARC层上形成第二光致抗蚀剂层。 使用第二掩模在第二光致抗蚀剂层中形成第二组开口，使第二掩模直接暴露在下面的BARC层。 然后去除BARC层的暴露部分。 随后，在第一光致抗蚀剂层中的第一组中的一个或多个开口在其中填充有BARC层的暴露部分被去除之后，用于在衬底中形成开口。

公开(公告)号：US06488509B1

公开(公告)日：2002-12-03

申请号：US10055092

申请日：2002-01-23

申请人： Bang-Chein Ho ,  Jian-Hong Chen

发明人： Bang-Chein Ho ,  Jian-Hong Chen

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  H01L21/312

摘要： A method of fabricating a dual-damascene structure comprising the following steps. A structure having a patterned low-k material layer formed thereover is provided. The patterned low-k material layer having an upper surface and at least one via hole formed therethrough. A plug material layer is formed over the patterned low-k material layer and filling the at least one via hole. The plug material layer being comprised of a material dissolvable in TMAH or deionized water. The plug material layer is developed to form a plug within the respective at least one via hole having a height below the upper surface of the patterned low-k material layer. The plug is baked to crosslink the plug material comprising the plug. A trench masking layer is formed and patterned to form a patterned trench masking layer having at least one trench substantially centered over the respective at least one via hole and exposing a portion of patterned low-k material layer adjacent the at least one via hole. Wherein the crosslinked plug material comprising the plug does not adversely interact with the trench masking layer. The patterned low-k material layer is etched at the exposed portion using the patterned trench masking layer as a mask to form a trench opening substantially centered over the via hole. The etching of the patterned low-k material layer also removing some of the plug to form a partially etched plug. The trench opening and the via hole comprising a dual-damascene opening. The partially etched plug is removed from the via hole. A planarized dual-damascene structure is formed within the dual-damascene opening.

摘要翻译： 一种制造双镶嵌结构的方法，包括以下步骤。 提供了具有形成在其上的图案化的低k材料层的结构。 图案化的低k材料层具有通过其形成的上表面和至少一个通孔。 在图案化的低k材料层上形成插塞材料层并填充至少一个通孔。 插塞材料层由可溶于TMAH或去离子水的材料组成。 插塞材料层被显影以在相应的至少一个通孔内形成插塞，该通孔的高度低于图案化的低k材料层的上表面。 将塞子烘烤以交联包括塞子的塞子材料。 沟槽掩模层被形成并图案化以形成具有至少一个沟槽的图案化沟槽掩模层，该沟槽基本上位于相应的至少一个通孔上方，并且暴露出与所述至少一个通孔相邻的图案化的低k材料层的一部分。 其中包含塞子的交联塞子材料与沟槽掩模层不会不利地相互作用。 使用图案化的沟槽掩模层作为掩模在曝光部分刻蚀图案化的低k材料层，以形成基本上位于通孔上方的沟槽开口。 图案化的低k材料层的蚀刻也去除了一些插塞以形成部分蚀刻的插塞。 沟槽开口和通孔包括双镶嵌开口。 从通孔中去除部分蚀刻的塞子。 在双镶嵌开口内形成平面化的双镶嵌结构。

公开(公告)号：US06197476B1

公开(公告)日：2001-03-06

申请号：US09213943

申请日：1998-12-17

申请人： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin

发明人： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin

IPC分类号： G03C176

CPC分类号： C08F32/00 ,  C09D4/00 ,  C08F232/00

摘要： The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, wherein each R1 is independently selected from C1-20 alkyl and phenyl.

摘要翻译： 本发明提供环状二酮聚合物，其是选自由式（I）和（II）表示的环状二酮单体的均聚物或共聚物，其中A和B可以相同或不同，并且独立地选自 由卤素，氢，C 3-20环状或脂环族烷基，C 1-20直链和支链烷基，C6-20芳基，C7-20芳基烷基，C7-20烷基芳基，甲硅烷基，烷基甲硅烷基，甲基，烷基锗烷基，烷氧基羰基，酰基和 杂环组 或者A和B连接在一起形成C3-20饱和或不饱和环状烃基或取代或未取代的杂环基; C选自氧，硫，其中每个R 1独立地选自C 1-20 烷基和苯基。

公开(公告)号：US07749904B2

公开(公告)日：2010-07-06

申请号：US11748574

申请日：2007-05-15

申请人： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

发明人： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

IPC分类号： H01L21/44

CPC分类号： H01L21/76808

摘要： An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

摘要翻译： 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

公开(公告)号：US07241682B2

公开(公告)日：2007-07-10

申请号：US10789083

申请日：2004-02-27

申请人： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

发明人： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

摘要翻译： 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。