Chemical mechanical polishing compositions and methods relating thereto
    3.
    发明授权
    Chemical mechanical polishing compositions and methods relating thereto 有权
    化学机械抛光组合物及其相关方法

    公开(公告)号:US07300874B2

    公开(公告)日:2007-11-27

    申请号:US11077671

    申请日:2005-03-10

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: C09G1/02 H01L21/3212

    摘要: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

    摘要翻译: 包含需要去除的金属层的半导体基板的化学机械抛光方法和利用包含亲水官能团和相对较少亲水官能团的工程共聚物分子的组合物的金属互连的金属互连的方法; 该工程共聚物分子在CMP期间能够在抛光垫表面和衬底表面之间进行接触介导的反应,导致衬底中金属互连的最小凹陷。

    Chemical mechanical polishing compositions and methods relating thereto
    4.
    发明授权
    Chemical mechanical polishing compositions and methods relating thereto 有权
    化学机械抛光组合物及其相关方法

    公开(公告)号:US06632259B2

    公开(公告)日:2003-10-14

    申请号:US09860933

    申请日:2001-05-18

    IPC分类号: C09G102

    CPC分类号: C09G1/02 H01L21/3212

    摘要: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

    摘要翻译: 包含需要去除的金属层的半导体基板的化学机械抛光方法和利用包含亲水官能团和相对较少亲水官能团的工程共聚物分子的组合物的金属互连的金属互连的方法; 该工程共聚物分子在CMP期间能够在抛光垫表面和衬底表面之间进行接触介导的反应,导致衬底中金属互连的最小凹陷。