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公开(公告)号：US20220093651A1
公开(公告)日：2022-03-24
申请号：US17354152
申请日：2021-06-22
发明人： Yuming XIA , En-Tsung CHO , Haijiang YUAN
IPC分类号： H01L27/12
摘要： The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.
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公开(公告)号：US20220028902A1
公开(公告)日：2022-01-27
申请号：US17370399
申请日：2021-07-08
发明人： Yuming XIA , En-Tsung CHO , Haijiang YUAN
IPC分类号： H01L27/12 , H01L29/417 , H01L21/288
摘要： The present disclosure relates to a source-drain electrode and a method for manufacturing the same, an array substrate and a method for manufacturing the same, and a display mechanism. A method for manufacturing a source-drain electrode includes steps of: disposing a conductive layer on an underlay; forming a photoresist layer on a side of the conductive layer away from the underlay; exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and electrochemically depositing a functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode. The source-drain electrode manufactured by the above method has a higher conductivity.
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3.发明申请公开(公告)号：US20220028905A1
公开(公告)日：2022-01-27
申请号：US17383800
申请日：2021-07-23
发明人： Yuming XIA , En-Tsung CHO , Lidan YE
IPC分类号： H01L27/12
摘要： A method for manufacturing a data line includes: forming a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing and then developing the photoresist layer to form a groove penetrating the photoresist layer, thus obtaining a patterned photoresist layer; and depositing a functional material electrochemically on the patterned photoresist layer, then removing the patterned photoresist layer to obtain the conductive layer with the patterned functional material layer, thereby obtaining the data line.
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公开(公告)号：US20220037476A1
公开(公告)日：2022-02-03
申请号：US17383394
申请日：2021-07-22
发明人： En-Tsung CHO , Yuming XIA , Wei LI
IPC分类号： H01L29/40 , H01L27/12 , H01L29/423 , H01L29/49 , C23C14/14 , C23C14/58 , C23C16/56 , C23C16/455 , C23C28/02 , C23C14/35 , C23C16/16 , C23C16/14
摘要： The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.
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公开(公告)号：US20220037371A1
公开(公告)日：2022-02-03
申请号：US17377399
申请日：2021-07-16
发明人： Yuming XIA , En-Tsung CHO , Chongwei TANG
IPC分类号： H01L27/12
摘要： The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.
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6.发明申请公开(公告)号：US20220037366A1
公开(公告)日：2022-02-03
申请号：US17325192
申请日：2021-05-19
发明人： Yuming XIA , En-Tsung CHO , Haijiang YUAN
摘要： The present application discloses a manufacturing method for a carbon nanotube conductive film, a display panel and a display device. The manufacturing method for the carbon nanotube conductive film includes steps of: forming a mesoporous silica; depositing a catalyst layer in a channel of the mesoporous silica by atomic layer deposition; manufacturing the mesoporous silica with the catalyst layer deposited in the channel into a mesoporous silica film; introducing a carbon matrix precursor into the channel of the mesoporous silica film by chemical vapor deposition, and reacting under the catalysis of the catalyst layer to form a carbon nanotube film; and removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film.
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公开(公告)号：US20220028904A1
公开(公告)日：2022-01-27
申请号：US17352846
申请日：2021-06-21
发明人： Xia YUMING , En-Tsung CHO , Chongwei TANG
IPC分类号： H01L27/12 , H01L21/288 , G02F1/1368
摘要： A gate unit and a manufacturing method thereof, a method of manufacturing an array substrate, and a display mechanism are provided. The method of manufacturing a gate unit includes: providing a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing the photoresist layer, and then developing the photoresist layer to form a groove extending through the photoresist layer on the photoresist layer, so as to form the photoresist layer with a pattern; and electrochemically depositing a functional material on the photoresist layer with the pattern, and then removing the photoresist layer to obtain the conductive layer having a pattern layer formed thereon, so as to obtain the gate unit.
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公开(公告)号：US20220262826A1
公开(公告)日：2022-08-18
申请号：US17622715
申请日：2020-06-24
发明人： Yuming XIA , En-Tsung CHO , Wanfei YONG
摘要： A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.
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公开(公告)号：US20220037539A1
公开(公告)日：2022-02-03
申请号：US17297475
申请日：2019-12-04
发明人： En-Tsung CHO , FENGYUN YANG
IPC分类号： H01L31/028 , H01L31/18
摘要： This application discloses a photoreceptor, a panel, and a method for manufacturing a photoreceptor. The photoreceptor includes a photosensitive layer. The photosensitive layer includes a subject entity including a plurality of holes, and an object entity including at least two photosensitive materials whose photosensitive wavelength bands are different. The holes of the subject entity are filled with the photosensitive materials.
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公开(公告)号：US20190067422A1
公开(公告)日：2019-02-28
申请号：US15578539
申请日：2017-09-18
发明人： En-Tsung CHO
IPC分类号： H01L29/167 , H01L27/12 , H01L29/04 , H01L29/161 , H01L29/786 , H01L29/66
摘要： A thin film transistor array substrate comprises: a substrate, a plurality of thin film transistors disposed on the substrate, wherein each of the plurality of thin film transistors comprises: a gate electrode structure, an isolate protective layer disposed on the gate electrode structure, an active layer disposed on the isolate protective layer, a source electrode layer disposed on a side of the active layer and forming an ohmic contact with the active layer, a drain electrode layer disposed on other side of the active layer and forming an ohmic contact with the active layer, a first concentration doping layer disposed on the active layer and between the source electrode layer and the drain electrode layer, a passivation layer covered onto the active layer, the source electrode layer and the drain electrode layer, and a pixel electrode layer covered onto the passivation layer and the drain electrode layer.
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