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公开(公告)号：US20080243000A1
公开(公告)日：2008-10-02
申请号：US11575150
申请日：2005-09-08
申请人： Benoit Dufort , Alok Govil , Benoit Veillette
发明人： Benoit Dufort , Alok Govil , Benoit Veillette
IPC分类号： A61B8/14
CPC分类号： G01S7/52079 , G01S7/52017 , G01S7/523
摘要： An integrated SOI circuit is provided for implementing high-voltage ultrasound functions of an ultrasound imaging system. The integrated circuit is packaged as an integrated chip. The integrated circuit is composed of silicon-on-insulator (SOI) technology and integrates at least the following high-voltage ultrasound functions: gatedriver, power amplifier, transmit/receive switch. Optionally the integrated chip may contain a low noise amplifier and an analog multiplexer.
摘要翻译： 提供了一种用于实现超声成像系统的高电压超声功能的集成SOI电路。 集成电路封装为集成芯片。 集成电路由绝缘体上硅（SOI）技术组成，至少集成了以下高压超声功能：门控，功率放大器，发射/接收开关。 可选地，集成芯片可以包含低噪声放大器和模拟多路复用器。
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公开(公告)号：US07485916B2
公开(公告)日：2009-02-03
申请号：US10572924
申请日：2004-09-21
IPC分类号： H01L29/94
CPC分类号： H01L29/404 , B06B1/0292 , H01L28/82 , H01L29/402 , H01L29/7817 , H01L29/7824
摘要： A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having a plurality of segments that each form a plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled to a switching device that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.
摘要翻译： 场效应装置包括至少一个分段场板，所述至少一个分段场板中的每一个具有多个段，每个段形成电容器的板，其中所述场效应器件连接到电子元件，所述电子元件动态地连接所选择的 以选择性地设置栅极到漏极和漏极到源极的电容。 超声波装置包括耦合到切换装置的换能器，其在发射模式和接收模式切换装置之间切换换能器，其中切换装置包括场效应装置。
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公开(公告)号：US20110040189A1
公开(公告)日：2011-02-17
申请号：US12747249
申请日：2008-12-12
IPC分类号： A61B8/14
CPC分类号： B06B1/0292
摘要： A capacitive ultrasound transducer capable of operation in collapsed mode either with a reduced bias voltage, or with no bias voltage, is provided. The transducer includes a substrate that is contoured so that a middle region of the flexible membrane is collapsed against the substrate in the absence of a bias voltage. A non-collapsible gap may exists between the substrate and peripheral regions of the flexible membrane. The contour of the substrate may be such as to strain the flexible membrane past the point of collapse, or to mechanically interfere with the flexible membrane. The substrate may include a further membrane disposed beneath the flexible membrane, the further membrane being contoured so that the flexible membrane is collapsed against it. The substrate may a support disposed beneath the further membrane to deflect a corresponding portion of the further membrane upward toward the flexible membrane. The support may be a post. The transducer may be operated in collapse mode with an improved efficiency (k2eff) as compared to otherwise similar conventional transducers exhibiting comparably uncontoured substrates. A related medical imaging system is provided, which may include an array of such transducers disposed on a common substrate. A method of operating such a transducer is provided that includes operating the transducer in the collapse mode in the absence of a bias voltage.
摘要翻译： 提供能够以折叠模式操作或者具有降低的偏置电压或没有偏置电压的电容式超声换能器。 换能器包括基底，该基底的轮廓使得柔性膜的中间区域在没有偏置电压的情况下相对于基底折叠。 在柔性膜的基底和周边区域之间可能存在不可收缩的间隙。 衬底的轮廓可以是使柔性膜经过塌陷点，或机械地干涉柔性膜。 衬底可以包括设置在柔性膜下方的另一膜，另外的膜被成形为使得柔性膜相对于其折叠。 衬底可以是设置在另外的膜下方的支撑件，以将另外的膜的相应部分向上朝向柔性膜偏转。 支持可能是一个帖子。 传感器可以在崩溃模式下操作，其效率（k2eff）与其他相似的传统换能器相比表现出相当的未结合的基板。 提供了一种相关的医学成像系统，其可以包括设置在公共基底上的这种换能器的阵列。 提供了一种操作这种换能器的方法，其包括在没有偏置电压的情况下以折叠模式操作换能器。
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公开(公告)号：US06833726B2
公开(公告)日：2004-12-21
申请号：US10779093
申请日：2004-02-13
IPC分类号： G01R3126
CPC分类号： H01L29/404 , H01L27/1203 , H01L29/42368 , H01L29/7824 , H01L29/7826
摘要： The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.
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公开(公告)号：US08787116B2
公开(公告)日：2014-07-22
申请号：US12747249
申请日：2008-12-12
IPC分类号： H04R19/00
CPC分类号： B06B1/0292
摘要： A capacitive ultrasound transducer capable of operation in collapsed mode either with a reduced bias voltage, or with no bias voltage, is provided. The transducer includes a substrate that is contoured so that a middle region of the flexible membrane is collapsed against the substrate in the absence of a bias voltage. A non-collapsible gap may exists between the substrate and peripheral regions of the flexible membrane. The contour of the substrate may be such as to strain the flexible membrane past the point of collapse, or to mechanically interfere with the flexible membrane. The substrate may include a further membrane disposed beneath the flexible membrane, the further membrane being contoured so that the flexible membrane is collapsed against it. The substrate may a support disposed beneath the further membrane to deflect a corresponding portion of the further membrane upward toward the flexible membrane. The support may be a post. The transducer may be operated in collapse mode with an improved efficiency (k2eff) as compared to otherwise similar conventional transducers exhibiting comparably uncontoured substrates. A related medical imaging system is provided, which may include an array of such transducers disposed on a common substrate. A method of operating such a transducer is provided that includes operating the transducer in the collapse mode in the absence of a bias voltage.
摘要翻译： 提供能够以折叠模式操作或者具有降低的偏置电压或没有偏置电压的电容式超声换能器。 换能器包括基底，该基底的轮廓使得柔性膜的中间区域在没有偏置电压的情况下相对于基底折叠。 在柔性膜的基底和周边区域之间可能存在不可收缩的间隙。 衬底的轮廓可以是使柔性膜经过塌陷点，或机械地干涉柔性膜。 衬底可以包括设置在柔性膜下方的另一膜，另外的膜被成形为使得柔性膜相对于其折叠。 衬底可以是设置在另外的膜下方的支撑件，以将另外的膜的相应部分向上朝向柔性膜偏转。 支持可能是一个帖子。 传感器可以在崩溃模式下操作，其效率（k2eff）与其他相似的传统换能器相比表现出相当的未结合的基板。 提供了一种相关的医学成像系统，其可以包括设置在公共基底上的这种换能器的阵列。 提供了一种操作这种换能器的方法，其包括在没有偏置电压的情况下以折叠模式操作换能器。
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公开(公告)号：US06717214B2
公开(公告)日：2004-04-06
申请号：US10152235
申请日：2002-05-21
IPC分类号： H01L2701
CPC分类号： H01L29/404 , H01L27/1203 , H01L29/42368 , H01L29/7824 , H01L29/7826
摘要： The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.
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7.发明授权Circuit and method for controlling a dynamic, bi-directional high voltage analog switch 失效用于控制动态双向高压模拟开关的电路和方法公开(公告)号：US06509781B2
公开(公告)日：2003-01-21
申请号：US09812428
申请日：2001-03-20
申请人： Benoit Dufort
发明人： Benoit Dufort
IPC分类号： H03K19185
CPC分类号： H03K17/063 , H03K17/04123 , H03K17/6874
摘要： A circuit and method for controlling a switch include a level shifter that controls a dynamic, bi-directional high voltage analog switch. The level shifter generally includes transistors, input terminals, a voltage source, a high negative voltage source, and a diode. The configuration of the level shifter, inter alia, allows the switch to be kept ON without a current/signal, prevents dissipation of transistors of the level shifter, and provides constant gate-to-source voltage on the switch transistors for improved linearity.
摘要翻译： 用于控制开关的电路和方法包括控制动态双向高压模拟开关的电平移位器。 电平移位器通常包括晶体管，输入端子，电压源，高负电压源和二极管。 电平移位器的配置尤其允许开关保持导通而不需要电流/信号，防止电平移位器的晶体管损耗，并且在开关晶体管上提供恒定的栅极 - 源极电压以提高线性度。
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公开(公告)号：US09000653B2
公开(公告)日：2015-04-07
申请号：US12063181
申请日：2006-07-19
申请人： John Fraser , Benoit Dufort
发明人： John Fraser , Benoit Dufort
CPC分类号： B06B1/0207
摘要： A transducer array of micromachined ultrasonic transducer elements is connected to a microbeamformer. Driver circuits of the microbeamformer have a first output coupled to a first electrode of a respective transducer element and a second output coupled to a second electrode of the respective transducer element. The driver circuits apply first and second time varying voltage signals to the electrodes, with one voltage signal being time inverted relative to the other. The peak-to-peak voltage applied to the transducer element is 1.75 to 2.0 times the peak-to-peak voltage of either the first or the second time varying voltage signal.
摘要翻译： 微加工超声换能器元件的换能器阵列连接到微波束成形器。 微波束形成器的驱动器电路具有耦合到相应换能器元件的第一电极的第一输出和耦合到相应换能器元件的第二电极的第二输出。 驱动器电路将第一和第二时变电压信号施加到电极，其中一个电压信号相对于另一个时间反转。 施加到换能器元件的峰 - 峰电压是第一或第二时变电压信号的峰 - 峰电压的1.75至2.0倍。
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公开(公告)号：US06661059B1
公开(公告)日：2003-12-09
申请号：US10261254
申请日：2002-09-30
IPC分类号： H01L2976
CPC分类号： H01L29/7394
摘要： A lateral insulated gate bipolar PMOS device includes a semiconductor substrate, a buried insulating layer and a lateral PMOS transistor device in an SOI layer on the buried insulating layer having a source region of p-type conductivity. A lateral drift region of n-type conductivity is provided adjacent the body region, and a drain region of the p-type conductivity is provided laterally spaced from the body region by the drift region. An n-type conductivity drain region is formed of a shallow n-type contact surface region inserted into a p-inversion buffer. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.
摘要翻译： 横向绝缘栅极双极性PMOS器件包括在具有p型导电性的源极区域的掩埋绝缘层上的SOI层中的半导体衬底，埋入绝缘层和横向PMOS晶体管器件。 在身体区域附近提供n型导电性的横向漂移区域，并且通过漂移区域与身体区域横向间隔设置p型导电性的漏极区域。 n型导电性漏极区域由插入p反转缓冲器的浅n型接触表面区域形成。 栅电极设置在主体区域的一部分上，其中在操作期间形成沟道区，并且在邻近身体区域的横向漂移区的一部分上延伸，栅电极与身体区域和漂移区域绝缘 绝缘区域。
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公开(公告)号：US20100141093A1
公开(公告)日：2010-06-10
申请号：US12063181
申请日：2006-07-19
申请人： John Fraser , Benoit Dufort
发明人： John Fraser , Benoit Dufort
IPC分类号： H01L41/047
CPC分类号： B06B1/0207
摘要： An ultrasonic transducer (104,313), transducer array (103) and an ultrasonic probe (100) are described.
摘要翻译： 描述了超声换能器（104,313），换能器阵列（103）和超声波探头（100）。
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