利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.039 秒)

    Ddr2 protein with activated kinase activity and preparation method thereof
    1.
    发明申请
    Ddr2 protein with activated kinase activity and preparation method thereof 审中-公开
    具有活化激酶活性的Ddr2蛋白及其制备方法

    公开(公告)号：US20070128609A1

    公开(公告)日：2007-06-07

    申请号：US10595585

    申请日：2004-11-01

    申请人： Beom-Seok Yang ,  Sung-Dae Park

    发明人： Beom-Seok Yang ,  Sung-Dae Park

    IPC分类号： C12Q1/68 ,  C07H21/04 ,  C12P21/06 ,  C12N9/12 ,  C12N5/06 ,  C12N15/86

    CPC分类号： C07K14/705 ,  C07K2319/00 ,  C07K2319/21 ,  C07K2319/23 ,  C07K2319/35 ,  C12N9/1205

    摘要： The present invention relates to a protein containing a modified DDR (Discoidin Domain Receptor) 2 cytosolic tyrosine kinase domain having an increased autophosphorylation and tyrosine kinase activity; a method for preparing a large amount of a protein containing DDR2 cytosolic tyrosine kinase domain, having an increased autophosphorylation and tyrosine kinase activity by inducing phosphorylations of tyrosines by a co-expression with Src or Src related proteins in host cells, or by H2O2 processing of host cells, or a site directed mutation modifying at least one of tyrosines to other amino acid; and a use thereof as a target material in developing medical drugs for treating a disease caused by an excessively activated DDR2 autophosphorylation and tyrosine kinase activity.

    摘要翻译： 本发明涉及含有增加的自磷酸化和酪氨酸激酶活性的修饰的DDR（盘带蛋白结构域受体）2胞质酪氨酸激酶结构域的蛋白质; 通过与宿主细胞中的Src或Src相关蛋白的共表达，或通过H 2 O 2处理，通过诱导酪氨酸的磷酸化，具有增加的自磷酸化和酪氨酸激酶活性的DDR2胞质酪氨酸激酶结构域的蛋白质的制备方法 宿主细胞或将至少一种酪氨酸修饰至其它氨基酸的位点定向突变; 以及其用作开发用于治疗由过度活化的DDR2自磷酸化和酪氨酸激酶活性引起的疾病的药物的目标材料。

    DDR2 PROTEIN WITH ACTIVATED KINASE ACTIVITY AND PREPARATION METHOD THEREOF
    2.
    发明申请
    DDR2 PROTEIN WITH ACTIVATED KINASE ACTIVITY AND PREPARATION METHOD THEREOF 审中-公开
    具有活性激酶活性的DDR2蛋白及其制备方法

    公开(公告)号：US20120270234A1

    公开(公告)日：2012-10-25

    申请号：US12987863

    申请日：2011-01-10

    申请人： Beom-Seok YANG ,  Sung-Dae Park

    发明人： Beom-Seok YANG ,  Sung-Dae Park

    IPC分类号： C12N9/12 ,  C12Q1/48 ,  G01N21/76 ,  C12N15/866

    CPC分类号： C07K14/705 ,  C07K2319/00 ,  C07K2319/21 ,  C07K2319/23 ,  C07K2319/35 ,  C12N9/1205

    摘要： The present invention relates to a protein containing a modified DDR (Discoidin Domain Receptor) 2 cytosolic tyrosine kinase domain having an increased autophosphorylation and tyrosine kinase activity; a method for preparing a large amount of a protein containing DDR2 cytosolic tyrosine kinase domain, having an increased autophosphorylation and tyrosine kinase activity by inducing phosphorylations of tyrosines by a co-expression with Src or Src related proteins in host cells, or by H2O2 processing of host cells, or a site directed mutation modifying at least one of tyrosines to other amino acid; and a use thereof as a target material in developing medical drugs for treating a disease caused by an excessively activated DDR2 autophosphorylation and tyrosine kinase activity.

    摘要翻译： 本发明涉及含有增加的自磷酸化和酪氨酸激酶活性的修饰的DDR（盘带蛋白结构域受体）2胞质酪氨酸激酶结构域的蛋白质; 通过与宿主细胞中的Src或Src相关蛋白的共表达，或通过H 2 O 2处理，通过诱导酪氨酸的磷酸化，具有增加的自磷酸化和酪氨酸激酶活性的DDR2胞质酪氨酸激酶结构域的蛋白质的制备方法 宿主细胞或将至少一种酪氨酸修饰至其它氨基酸的位点定向突变; 以及其用作开发用于治疗由过度活化的DDR2自磷酸化和酪氨酸激酶活性引起的疾病的药物的目标材料。

    SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
    4.
    发明授权
    SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same 有权
    用于消除SOI MOSFET中的浮体效应的SOI半导体集成电路及其制造方法

    公开(公告)号：US06521959B2

    公开(公告)日：2003-02-18

    申请号：US09782116

    申请日：2001-02-13

    申请人： Young-Wug Kim ,  Byung-Sun Kim ,  Hee-Sung Kang ,  Young-Gun Ko ,  Sung-Dae Park ,  Min-Su Kim ,  Kwang-Il Kim

    发明人： Young-Wug Kim ,  Byung-Sun Kim ,  Hee-Sung Kang ,  Young-Gun Ko ,  Sung-Dae Park ,  Min-Su Kim ,  Kwang-Il Kim

    IPC分类号： H01L2972

    CPC分类号： H01L29/78615

    摘要： A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.

    摘要翻译： 提供了绝缘体上硅（SOI）集成电路和制造SOI集成电路的方法。 在SOI衬底上形成至少一个隔离晶体管有源区和体线。 晶体管有源区和体线被与SOI衬底的掩埋绝缘层接触的隔离层围绕。 晶体管有源区的侧壁的一部分延伸到主体线。 因此，晶体管有源区域通过主体延伸部电连接到主体线路。 身体延伸部分覆盖有身体绝缘层。 绝缘栅图案形成在晶体管有源区上方，栅极图案的一端与主体绝缘层重叠。