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    Method and system of restricted substance management and recycling
    2.
    发明申请
    Method and system of restricted substance management and recycling 审中-公开
    限制物质管理和回收的方法和系统

    公开(公告)号：US20070106528A1

    公开(公告)日：2007-05-10

    申请号：US11644115

    申请日：2006-12-22

    申请人： Bernd Gottselig ,  Bing Xu ,  Frank Kovacic ,  Holly Zhang ,  John Nelson ,  Pratapa Srikiran ,  Richard Gilbert

    发明人： Bernd Gottselig ,  Bing Xu ,  Frank Kovacic ,  Holly Zhang ,  John Nelson ,  Pratapa Srikiran ,  Richard Gilbert

    IPC分类号： G06Q99/00

    CPC分类号： G06Q10/06 ,  G06Q10/087 ,  G06Q10/0875 ,  G06Q10/30 ,  Y02W90/20

    摘要： A method is provided of restricted substance management and recycling in a manufacturing environment. The method includes the steps of inputting restricted substances and recycle content data of parts supplied by an inputter of information and receiving the inputted data by a receiver of information via a computer system. The method also includes the steps of reviewing the inputted data and determining parts with banned or recycled content or substances over predetermined thresholds. The method further includes the steps of reporting the determined parts to the inputter of the information and the receiver of the information.

    摘要翻译： 在制造环境中提供限制物质管理和再循环的方法。 该方法包括以下步骤：输入受限制的物质并回收由信息输入者提供的部分的内容数据，并通过计算机系统接收信息的接收者接收输入的数据。 该方法还包括以下步骤：检查输入的数据并且确定具有超过预定阈值的禁用或再循环内容物质。 该方法还包括将确定的部分报告给信息的输入者和信息的接收者的步骤。

    Method and components for bonding a silicon carbide molded part to another such part or to a metallic part
    3.
    发明授权
    Method and components for bonding a silicon carbide molded part to another such part or to a metallic part 失效
    用于将碳化硅模制部件接合到另一个这种部件或金属部件的方法和部件

    公开(公告)号：US4961529A

    公开(公告)日：1990-10-09

    申请号：US287342

    申请日：1988-12-20

    申请人： Bernd Gottselig ,  Erno Gyarmati ,  Aristides Naoumidis

    发明人： Bernd Gottselig ,  Erno Gyarmati ,  Aristides Naoumidis

    IPC分类号： B23K20/00 ,  C04B37/00 ,  C04B37/02

    CPC分类号： C04B35/645 ,  C04B37/003 ,  C04B37/005 ,  C04B37/025 ,  C04B2235/6562 ,  C04B2235/6582 ,  C04B2235/963 ,  C04B2237/083 ,  C04B2237/365 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/52 ,  C04B2237/567 ,  C04B2237/568 ,  C04B2237/60 ,  C04B2237/708 ,  Y10T428/264 ,  Y10T428/266

    摘要： A layer of titanium carbosilicide Ti.sub.3 SiC.sub.2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon carbide also makes possible brazed juoints with steel alloy or nickel based alloy parts. The layer may be applied directly by a powder dispersion in a volatile but viscous glycol or by sputtering or else the layer can be made in place from a powder mixture of components, especially TiC.sub.0,8 and Tisi.sub.2 (5:1) or a titanium layer of a thickness in the range of 1 to 3 .mu.m that reacts with the silicon carbide surface. When silicon carbide parts are joined together, the heating up to make the joint also serves to convert a titanium layer into titanium carbosilicide. When silicon carbide is to be joined with metal, a preliminary heating step is necessary to at first convert a powder mixture or a titanium layer on the silicon carbide surface to Ti.sub.3 SiC.sub.2. Alternatively a Ti.sub.3 SiC.sub. 2 surface layer can be formed by a sputtering process. The Ti.sub.3 SiC.sub.2 layer favors brazing of the metal part to the silicon carbide surface as treated. The heating requires reaching a temperature in the region from 1200.degree. to 1600.degree. C. for periods between a half hour to about three hours in the presence of a reducing protective gas.

    摘要翻译： 在用于制造接头的碳化硅表面上的碳化硅硅钛酸Ti3SiC2层可以在热压步骤中将碳化硅体连接在一起，并获得与碳化硅材料的强度相当的接合强度。 这种碳化硅层也可以用钢合金或镍基合金部件进行铜焊接。 该层可以通过粉末分散体直接施加在挥发性但粘稠的二醇中或通过溅射，或者可以从组分的粉末混合物，特别是TiC0,8和Tisi2（5:1）的粉末混合物或钛层 厚度在1至3μm的范围内，与碳化硅表面反应。 当碳化硅部分接合在一起时，加热至接合还用于将钛层转化为碳硅化钛。 当碳化硅与金属接合时，需要预加热步骤，以便首先将碳化硅表面上的粉末混合物或钛层转化为Ti 3 SiC 2。 或者，可以通过溅射工艺形成Ti 3 SiC 2表面层。 Ti3SiC2层有利于金属部分对被处理的碳化硅表面的钎焊。 加热需要在还原保护气体的存在下，在1200℃至1600℃的温度范围内达到半小时至约3小时。