利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

268 条记录 (耗时 0.026 秒)

    Use of silicon oxynitride ARC for metal layers
    3.
    发明授权
    Use of silicon oxynitride ARC for metal layers 有权
    氧氮化硅ARC用于金属层

    公开(公告)号：US06326231B1

    公开(公告)日：2001-12-04

    申请号：US09207562

    申请日：1998-12-08

    申请人： Ramkumar Subramanian ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Marina V. Plat ,  Christopher F. Lyons ,  Bharath Rangarajan ,  Michael K. Templeton

    发明人： Ramkumar Subramanian ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Marina V. Plat ,  Christopher F. Lyons ,  Bharath Rangarajan ,  Michael K. Templeton

    IPC分类号： H01L2100

    CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/3143 ,  H01L21/3145

    摘要： In one embodiment, the present invention relates to a method of forming a silicon oxynitride antireflection coating over a metal layer, involving the steps of providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate; depositing a silicon oxynitride layer over the metal layer having a thickness from about 100 Å to about 150 Å; and forming an oxide layer having a thickness from about 5 Å to about 50 Å over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating. In another embodiment, the present invention relates to a method of reducing an apparent reflectivity of a metal layer having a first reflectivity in a semiconductor structure, involing forming a silicon oxynitride antireflection coating over the metal layer; wherein the silicon oxynitride antireflection coating formed over the metal layer has a second reflectivity and is formed by depositing silicon oxynitride on the metal layer by chemical vapor deposition and forming an oxide layer over the oxynitride, and the difference between the first reflectivity and the second reflectivity is at least about 60%.

    摘要翻译： 在一个实施方案中，本发明涉及在金属层上形成氮氧化硅抗反射涂层的方法，包括以下步骤：在半导体衬底的至少一部分上提供包括金属层的半导体衬底; 在所述金属层上沉积厚度为约至约的氧氮化硅层; 并在氮氧化硅层上形成厚度约为5-20埃的氧化物层，以提供氮氧化硅抗反射涂层。 在另一个实施方案中，本发明涉及一种在半导体结构中减少具有第一反射率的金属层的表观反射率的方法，包括在金属层上形成氮氧化硅抗反射涂层; 其中形成在所述金属层上的所述氧氮化硅抗反射涂层具有第二反射率，并且通过化学气相沉积在所述金属层上沉积氧氮化硅并在所述氧氮化物上形成氧化物层，并且所述第一反射率和所述第二反射率之间的差异 至少约60％。

    Multiple nozzles for dispensing resist
    6.
    发明授权
    Multiple nozzles for dispensing resist 有权
    用于分配抗蚀剂的多个喷嘴

    公开(公告)号：US06376013B1

    公开(公告)日：2002-04-23

    申请号：US09413143

    申请日：1999-10-06

    申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Michael K. Templeton

    发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Michael K. Templeton

    IPC分类号： B05D100

    CPC分类号： H01L21/6715 ,  B05B7/0408 ,  B05C11/02 ,  B05C11/08 ,  G03F7/162

    摘要： A system and method is provided that facilitates the application of a uniform layer of photoresist material spincoated onto a semiconductor substrate (e.g wafer). The present invention accomplishes this end by utilizing a measurement system that measures the thickness uniformity of the photoresist material applied on a test wafer by a nozzle, and then adjusting the viscosity of the photoresist material by varying the ratio in a solvent/resist mixture, and/or adjusting the temperature of the mixture. A system and method that employs a plurality of nozzles is also provided that disperses resist at different annular regions on a wafer to facilitate the application of a uniform layer of photoresist material spincoated onto the wafer. The system and method utilize a measurement system that measures the thickness and thickness uniformity of each layer of photoresist material applied at each annular region of the wafer. The measured thickness uniformity and overall thickness for each annular region is then used to adjust the volume and viscosity of a solvent/resist mixture applied through each nozzle.

    摘要翻译： 提供了一种系统和方法，其有利于将均匀的光致抗蚀剂材料层涂覆在半导体衬底（例如晶片）上。 本发明通过利用测量系统来实现这一目的，测量系统通过喷嘴测量施加在测试晶片上的光致抗蚀剂材料的厚度均匀性，然后通过改变溶剂/抗蚀剂混合物中的比例来调节光致抗蚀剂材料的粘度，以及 /或调整混合物的温度。 还提供了使用多个喷嘴的系统和方法，其将抗蚀剂分散在晶片上的不同环形区域，以便于将均匀的光致抗蚀剂材料层涂覆在晶片上。 该系统和方法利用测量系统，其测量在晶片的每个环形区域施加的每层光致抗蚀剂材料的厚度和厚度均匀性。 然后使用测量的每个环形区域的厚度均匀性和总厚度来调节通过每个喷嘴施加的溶剂/抗蚀剂混合物的体积和粘度。

    System for uniformly heating photoresist
    7.
    发明授权
    System for uniformly heating photoresist 有权
    光刻胶均匀加热系统

    公开(公告)号：US6034771A

    公开(公告)日：2000-03-07

    申请号：US185981

    申请日：1998-11-04

    申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Michael K. Templeton

    发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Michael K. Templeton

    IPC分类号： G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  G01B9/02

    CPC分类号： G03F7/38 ,  G03F7/168 ,  G03F7/40

    摘要： A system for regulating heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material, for example. The system includes a plurality of optical fibers, each optical fiber directing radiation to respective portions of the material. Radiation reflected from the respective portions are collected by a measuring system which processes the collected radiation. The reflected radiation are indicative of the temperature of the respective portions of the material. The measuring system provides material temperature related data to a processor which determines the temperature of the respective portions of the material. The system also includes a plurality of heating devices; each heating device corresponds to a respective portion of the material and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the material.

    摘要翻译： 提供了用于调节材料的加热温度的系统。 该材料可以是例如光致抗蚀剂，顶部或底部抗反射涂层，低K电介质材料，SOG或其它旋涂材料。 该系统包括多个光纤，每个光纤将辐射引导到材料的相应部分。 从相应部分反射的辐射由处理收集的辐射的测量系统收集。 反射的辐射表示材料各部分的温度。 测量系统将材料温度相关数据提供给确定材料各部分的温度的处理器。 该系统还包括多个加热装置; 每个加热装置对应于材料的相应部分并提供其加热。 处理器选择性地控制加热装置以便调节材料的各个部分的温度。

    Nozzle arm movement for resist development
    8.
    发明授权
    Nozzle arm movement for resist development 有权
    喷嘴臂运动用于抗蚀剂开发

    公开(公告)号：US06541184B1

    公开(公告)日：2003-04-01

    申请号：US09655979

    申请日：2000-09-06

    申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

    发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

    IPC分类号： G03C556

    CPC分类号： H01L21/6715 ,  G03F7/3028

    摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.

    摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。 移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。 该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。 当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。 厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

    UV-enhanced silylation process to increase etch resistance of ultra thin resists
    9.
    发明授权
    UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
    UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性

    公开(公告)号：US06451512B1

    公开(公告)日：2002-09-17

    申请号：US09565691

    申请日：2000-05-01

    申请人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    发明人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    IPC分类号： G03F700

    CPC分类号： G03F7/265 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

    摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.

    摘要翻译： 在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或 在开发超薄抗蚀剂后。

    Nozzle arm movement for resist development
    10.
    发明授权
    Nozzle arm movement for resist development 有权
    喷嘴臂运动用于抗蚀剂开发

    公开(公告)号：US06248175B1

    公开(公告)日：2001-06-19

    申请号：US09430001

    申请日：1999-10-29

    申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

    发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

    IPC分类号： B05C1100

    CPC分类号： H01L21/6715 ,  G03F7/3021

    摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.

    摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。 移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。 移动系统还将喷嘴移动到偏离中心区域的第二位置，以在显影剂被旋涂时施加第二预定体积的显影剂材料到光致抗蚀剂材料层。 第一位置相对于第二位置位于中心区域的相反侧。 还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。 该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。