摘要:
One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.
摘要:
The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.
摘要:
In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
摘要:
In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要:
In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.
摘要:
One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber of the SEM; inspecting the patterned resist using an electron beam generated by the SEM; and introducing a cleaner containing ozone into the processing chamber of the SEM. Another aspect of the present invention relates to a system for processing a patterned substrate, containing a charge sensor for determining if charges exist on the patterned substrate and measuring the charges; a means for contacting the patterned substrate with a cleaner containing ozone to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned substrate and the cleaner, temperature of the cleaner, concentration of ozone in the cleaner, and pressure under which contact between the patterned substrate and the cleaner occurs; and a device for inspecting the patterned substrate with an electron beam.
摘要:
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要:
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要:
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要:
A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.