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公开(公告)号：US4729816A
公开(公告)日：1988-03-08
申请号：US271
申请日：1987-01-02
IPC分类号： H01L21/762 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/76202
摘要： An isolation formation process that minimizes bird's beak encroachment and preserves gate oxide integrity in the active region. Future active areas are protected by a structure having a central protective material layer, such as a thermal oxide, surrounded by a ring of thermal nitride. The thermal nitride and central protective material are coated by active region protection masking covers. In one embodiment, the masking covers include sidewalls over the thermal nitride ring. In another embodiment, the central protective material layer is overetched beneath an undercut covering layer to provide an undercut filled by the sidewall. All of these features contribute to bird's beak encroachment prevention which may be narrowed to as little as 0.07 microns per side.
摘要翻译： 隔离形成过程使鸟喙侵入最小化，并保持活性区域中的栅极氧化物完整性。 未来的活性区域由具有中间保护材料层的结构保护，例如热氧化物，被热氮化物环围绕。 热氮化物和中心保护材料由有源区域保护掩蔽罩覆盖。 在一个实施例中，掩模覆盖物包括在氮化物氮化物环上的侧壁。 在另一个实施例中，中心保护材料层在底切覆盖层下面被过蚀刻，以提供由侧壁填充的底切。 所有这些功能都有助于鸟的喙侵入预防，每侧可以缩小到0.07微米。
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公开(公告)号：US4914046A
公开(公告)日：1990-04-03
申请号：US305590
申请日：1989-02-03
IPC分类号： H01L21/28 , H01L21/3215 , H01L29/49
CPC分类号： H01L29/4925 , H01L21/28035 , H01L21/32155 , H01L29/4916
摘要： A polycrystalline silicon electrode and method for its fabrication are disclosed. The electrode includes a barrier layer formed by the implantation of carbon, nitrogen, or oxygen ions between two layers of polycrystalline silicon. The lower layer of polycrystalline silicon is lightly doped or undoped and the top layer is heavily doped to increase the conductivity of the electrode. The barrier layer impedes the diffusion of conductivity determining dopant impurities from one layer of polycrystalline silicon to the other.
摘要翻译： 公开了一种多晶硅电极及其制造方法。 电极包括通过在两层多晶硅之间注入碳，氮或氧离子形成的阻挡层。 多晶硅的下层被轻掺杂或未掺杂，并且顶层被重掺杂以增加电极的导电性。 阻挡层阻止导电性确定掺杂剂杂质从一层多晶硅扩散到另一层。
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