公开(公告)号：US20250132283A1

公开(公告)日：2025-04-24

申请号：US18921261

申请日：2024-10-21

Applicant: Brewer Science, Inc.

Inventor： Xin Li ,  Yongqing Grace Jiang ,  Ruimeng Zhang ,  Arthur O. Southard ,  Luke M. Prenger

IPC: H01L23/00

Abstract: A dual-layer temporary bonding system for semiconductor manufacturing including first and second bonding layers is provided. The first bonding layer includes a bond line adhesion promoter that acts as a bond line adhesion promoter during the bonding process. The second bonding layer includes one or more functionalities that will react with the bond line adhesion promoter during the bonding process. The materials and methods of this system can provide increased, precisely controlled, bond line adhesion while at the same time also satisfying other desired performance criteria.

公开(公告)号：US20240280905A1

公开(公告)日：2024-08-22

申请号：US18440906

申请日：2024-02-13

Applicant: Brewer Science, Inc.

Inventor： Si Li ,  Ming Luo ,  Ruimeng Zhang ,  Kelsey Brakensiek ,  Xue Wang ,  Yichen Liang ,  Xinlin Lu ,  Pengtao Lu

IPC: G03F7/11 ,  C07D301/00 ,  C07F7/08 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

CPC classification number: G03F7/11 ,  C07D301/00 ,  C07F7/0834 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

Abstract: Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.