公开(公告)号：US11817317B2

公开(公告)日：2023-11-14

申请号：US17079916

申请日：2020-10-26

Applicant: Brewer Science, Inc.

Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

IPC: H01L21/033 ,  G03F1/46 ,  H01L21/027

CPC classification number: H01L21/0332 ,  G03F1/46 ,  H01L21/0271

Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

公开(公告)号：US20240280905A1

公开(公告)日：2024-08-22

申请号：US18440906

申请日：2024-02-13

Applicant: Brewer Science, Inc.

Inventor： Si Li ,  Ming Luo ,  Ruimeng Zhang ,  Kelsey Brakensiek ,  Xue Wang ,  Yichen Liang ,  Xinlin Lu ,  Pengtao Lu

IPC: G03F7/11 ,  C07D301/00 ,  C07F7/08 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

CPC classification number: G03F7/11 ,  C07D301/00 ,  C07F7/0834 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

Abstract: Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.

公开(公告)号：US20210125829A1

公开(公告)日：2021-04-29

申请号：US17079916

申请日：2020-10-26

Applicant: Brewer Science, Inc.

Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

IPC: H01L21/033 ,  H01L21/027 ,  G03F1/46

Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.