公开(公告)号：US11361967B2

公开(公告)日：2022-06-14

申请号：US16999223

申请日：2020-08-21

Applicant: Brewer Science, Inc.

Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

IPC: H01L21/033 ,  H01L21/027

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20210057219A1

公开(公告)日：2021-02-25

申请号：US16999223

申请日：2020-08-21

Applicant: Brewer Science, Inc.

Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

IPC: H01L21/033 ,  H01L21/027

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20240222122A1

公开(公告)日：2024-07-04

申请号：US18607956

申请日：2024-03-18

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  G03F1/24 ,  G03F7/00 ,  H01L21/02

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20220195238A1

公开(公告)日：2022-06-23

申请号：US17559988

申请日：2021-12-22

Applicant: Brewer Science, Inc.

Inventor： Reuben T. Chacko ,  Tantiboro Ouattara ,  Andrea M. Chacko ,  Yichen Liang ,  Kelsey Brakensiek

IPC: C09D183/04 ,  G03F7/20 ,  C08G77/20

Abstract: Silicon hardmasks with a single-component polymer are disclosed. These hardmasks provide high optical homogeneity and high chemical homogeneity, thus minimizing or avoiding negative stochastic effects on feature critical dimension. The hardmasks further provide low porosity, higher density, and high silicon content and improve performance factors such as LER/LWR, defectivity, uniformity, and DoF.

公开(公告)号：US20190385837A1

公开(公告)日：2019-12-19

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  H01L21/02 ,  G03F1/24 ,  G03F7/20

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20240280905A1

公开(公告)日：2024-08-22

申请号：US18440906

申请日：2024-02-13

Applicant: Brewer Science, Inc.

Inventor： Si Li ,  Ming Luo ,  Ruimeng Zhang ,  Kelsey Brakensiek ,  Xue Wang ,  Yichen Liang ,  Xinlin Lu ,  Pengtao Lu

IPC: G03F7/11 ,  C07D301/00 ,  C07F7/08 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

CPC classification number: G03F7/11 ,  C07D301/00 ,  C07F7/0834 ,  C08G77/26 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14

Abstract: Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.

公开(公告)号：US11972948B2

公开(公告)日：2024-04-30

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: G03F7/00 ,  G03F1/24 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.