公开(公告)号：US20190385837A1

公开(公告)日：2019-12-19

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  H01L21/02 ,  G03F1/24 ,  G03F7/20

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20240222122A1

公开(公告)日：2024-07-04

申请号：US18607956

申请日：2024-03-18

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  G03F1/24 ,  G03F7/00 ,  H01L21/02

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US11972948B2

公开(公告)日：2024-04-30

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: G03F7/00 ,  G03F1/24 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.