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    HIGH-SILICON-CONTENT WET-REMOVABLE PLANARIZING LAYER
    2.
    发明申请
    HIGH-SILICON-CONTENT WET-REMOVABLE PLANARIZING LAYER 有权

    公开(公告)号：US20210125829A1

    公开(公告)日：2021-04-29

    申请号：US17079916

    申请日：2020-10-26

    Applicant: Brewer Science, Inc.

    Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

    IPC: H01L21/033 ,  H01L21/027 ,  G03F1/46

    Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

    ADHESION LAYERS FOR EUV LITHOGRAPHY
    3.
    发明申请
    ADHESION LAYERS FOR EUV LITHOGRAPHY 审中-公开

    公开(公告)号：US20190385837A1

    公开(公告)日：2019-12-19

    申请号：US16439377

    申请日：2019-06-12

    Applicant: Brewer Science, Inc.

    Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

    IPC: H01L21/027 ,  H01L21/02 ,  G03F1/24 ,  G03F7/20

    Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

    Assist layers for EUV lithography
    4.
    发明授权
    Assist layers for EUV lithography 有权
    辅助层进行EUV光刻

    公开(公告)号：US08968989B2

    公开(公告)日：2015-03-03

    申请号：US13682050

    申请日：2012-11-20

    Applicant: Brewer Science Inc.

    Inventor： Tantiboro Ouattara ,  Carlton Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero ,  Aline Collin

    IPC: G03F7/26 ,  G03F7/09 ,  G03F7/20 ,  G03F7/11 ,  B82Y30/00 ,  B82Y40/00

    CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

    Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

    Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

    ASSIST LAYERS FOR EUV LITHOGRAPHY
    7.
    发明申请
    ASSIST LAYERS FOR EUV LITHOGRAPHY 有权
    辅助层用于EUV LITHOGRAPHY

    公开(公告)号：US20130129995A1

    公开(公告)日：2013-05-23

    申请号：US13682050

    申请日：2012-11-20

    Applicant: Brewer Science Inc.

    Inventor： Tantiboro Ouattara ,  Carlton A. Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero

    IPC: G03F7/09 ,  G03F7/20

    CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

    Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

    Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING
    9.
    发明申请
    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING 有权
    用于石墨加工的旋转碳组合物

    公开(公告)号：US20140356593A1

    公开(公告)日：2014-12-04

    申请号：US14461109

    申请日：2014-08-15

    Applicant: Brewer Science Inc.

    Inventor： Vandana Krishnamurthy ,  Daniel M. Sullivan ,  Yubao Wang ,  Qin Lin ,  Sean Simmons

    IPC: B32B33/00 ,  B32B9/04

    CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

    Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

    Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

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