公开(公告)号：US20130129995A1

公开(公告)日：2013-05-23

申请号：US13682050

申请日：2012-11-20

Applicant: Brewer Science Inc.

Inventor： Tantiboro Ouattara ,  Carlton A. Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero

IPC: G03F7/09 ,  G03F7/20

CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

公开(公告)号：US20220195238A1

公开(公告)日：2022-06-23

申请号：US17559988

申请日：2021-12-22

Applicant: Brewer Science, Inc.

Inventor： Reuben T. Chacko ,  Tantiboro Ouattara ,  Andrea M. Chacko ,  Yichen Liang ,  Kelsey Brakensiek

IPC: C09D183/04 ,  G03F7/20 ,  C08G77/20

Abstract: Silicon hardmasks with a single-component polymer are disclosed. These hardmasks provide high optical homogeneity and high chemical homogeneity, thus minimizing or avoiding negative stochastic effects on feature critical dimension. The hardmasks further provide low porosity, higher density, and high silicon content and improve performance factors such as LER/LWR, defectivity, uniformity, and DoF.

公开(公告)号：US08968989B2

公开(公告)日：2015-03-03

申请号：US13682050

申请日：2012-11-20

Applicant: Brewer Science Inc.

Inventor： Tantiboro Ouattara ,  Carlton Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero ,  Aline Collin

IPC: G03F7/26 ,  G03F7/09 ,  G03F7/20 ,  G03F7/11 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。