公开(公告)号：US08968989B2

公开(公告)日：2015-03-03

申请号：US13682050

申请日：2012-11-20

Applicant: Brewer Science Inc.

Inventor： Tantiboro Ouattara ,  Carlton Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero ,  Aline Collin

IPC: G03F7/26 ,  G03F7/09 ,  G03F7/20 ,  G03F7/11 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

公开(公告)号：US20130129995A1

公开(公告)日：2013-05-23

申请号：US13682050

申请日：2012-11-20

Applicant: Brewer Science Inc.

Inventor： Tantiboro Ouattara ,  Carlton A. Washburn ,  Vandana Krishnamurthy ,  Douglas Guerrero

IPC: G03F7/09 ,  G03F7/20

CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

公开(公告)号：US09123541B2

公开(公告)日：2015-09-01

申请号：US14242551

申请日：2014-04-01

Applicant: Brewer Science Inc.

Inventor： Kui Xu ,  Mary Ann Hockey ,  Douglas Guerrero

IPC: H01L21/302 ,  H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  C08L33/12

CPC classification number: H01L21/0331 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F212/08 ,  C08F212/32 ,  C08F293/005 ,  C08F2438/03 ,  C08L33/12 ,  C09D125/08 ,  C09D125/14 ,  C09D125/16 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31138

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段，使得在蚀刻期间选择性地除去一个嵌段（例如聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如，聚苯乙烯）用添加剂进行修饰以进一步降低该块的蚀刻速率，所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。

公开(公告)号：US20140299969A1

公开(公告)日：2014-10-09

申请号：US14242551

申请日：2014-04-01

Applicant: Brewer Science Inc.

Inventor： Kui Xu ,  Mary Ann Hockey ,  Douglas Guerrero

IPC: H01L21/308

CPC classification number: H01L21/0331 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F212/08 ,  C08F212/32 ,  C08F293/005 ,  C08F2438/03 ,  C08L33/12 ,  C09D125/08 ,  C09D125/14 ,  C09D125/16 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31138

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段，使得在蚀刻期间选择性地除去一个嵌段（例如聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如，聚苯乙烯）用添加剂进行修饰以进一步降低该块的蚀刻速率，所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。