Humidity sensor
    1.
    发明授权
    Humidity sensor 失效
    湿度传感器

    公开(公告)号:US5004700A

    公开(公告)日:1991-04-02

    申请号:US561377

    申请日:1990-08-01

    CPC分类号: H01L29/4966 G01N27/4141

    摘要: A method of making a humidity sensor comprises providing a host device constituted by a semi-conductor substrate (10) and a gate insulator (13) of an insulated gate field effect transistor, forming a layer (14) of poly (vinyl) alcohol (PVA) on the exposed surface of the insulator, heat treating the layer to crystallize and stabilize the PVA, and forming a gate electrode (15) on the PVA layer, so that the gate electrode is porous allowing ambient water vapor to be absorbed by the PVA which, in response, undergoes a change of bulk dielectric constant, thereby causing a change in gate capacitance of the transistor resulting in a detectable change of electrical conductivity in the drain source channel.

    摘要翻译: 制造湿度传感器的方法包括提供由半导体衬底(10)和绝缘栅场效应晶体管的栅极绝缘体(13)构成的主体器件,形成聚(乙烯醇)(14)层(14) PVA)在绝缘体的暴露表面上,热处理该层以使PVA结晶并稳定,并在PVA层上形成栅电极(15),使得栅电极是多孔的,允许环境水蒸汽被 PVA,其响应地经历体介电常数的变化,从而引起晶体管的栅极电容的变化,导致漏极源极通道中的电导率的可检测变化。

    Moisture permeable electrode in a moisture sensor
    3.
    发明授权
    Moisture permeable electrode in a moisture sensor 失效
    湿度传感器中的透湿电极

    公开(公告)号:US4496931A

    公开(公告)日:1985-01-29

    申请号:US590343

    申请日:1984-03-16

    IPC分类号: H01C7/00 G01N27/12 H01G5/20

    CPC分类号: G01N27/126 G01N27/121

    摘要: A thin-film moisture sensor includes a moisture sensitive polymer film formed on a bottom electrode which is carried on a substrate, and a moisture permeable upper electrode formed on the polymer film. The moisture permeable upper electrode is made of an indium (In) thin-film. In another form, the moisture permeable upper electrode is made of a two-layered electrode including an indium (In) thin-film and a gold (Au) thin-film formed on the indium (In) thin-film.

    摘要翻译: 薄膜湿度传感器包括形成在底部电极上的湿敏聚合物膜,该底部电极承载在基底上,并且形成在聚合物膜上的透湿上电极。 透湿上电极由铟(In)薄膜制成。 在另一种形式中,透湿上电极由在铟(In)薄膜上形成的包含铟(In)薄膜和金(Au)薄膜的两层电极制成。

    Moisture sensor and a method for the production of the same
    5.
    发明授权
    Moisture sensor and a method for the production of the same 失效
    水分传感器及其制作方法

    公开(公告)号:US4651121A

    公开(公告)日:1987-03-17

    申请号:US733466

    申请日:1985-05-13

    CPC分类号: G01N27/225

    摘要: A moisture sensor comprising a substrate; a bottom electrode on the substrate; a moisture sensitive film sandwiched between an upper electrode and the bottom electrode on the substrate; a pair of connection terminals one of which is extended on the substrate from the bottom electrode and the other of which is formed on the substrate to be connected to the upper electrode; a step-shaped extension extended on the end of the moisture sensitive film from the upper electrode to the connection terminal for the upper electrode; and a metal film which covers said step-shaped extension.

    摘要翻译: 一种湿度传感器,包括基底; 基底上的底电极; 夹在基板上的上电极和底电极之间的湿敏膜; 一对连接端子,其一个从底部电极延伸到基板上,另一个连接端子形成在基板上,以连接到上电极; 从上电极到上电极的连接端子在湿敏膜的端部延伸的阶梯状延伸部; 以及覆盖所述台阶形延伸部的金属膜。

    Moisture sensor
    8.
    发明授权
    Moisture sensor 失效
    水分传感器

    公开(公告)号:US4558393A

    公开(公告)日:1985-12-10

    申请号:US604387

    申请日:1984-04-27

    IPC分类号: H01C7/00 G01N27/12 H01G5/20

    CPC分类号: G01N27/126 G01N27/121

    摘要: A moisture sensor comprising a substrate, a moisture sensitive polymer film having hydroxyl groups formed on said substrate, an electrode formed on said moisture sensitive film, and a chemical modification layer disposed between said substrate and said moisture sensitive film, said chemical modification layer having chemical bonding strength to both said substrate and said moisture sensitive film thereby increasing adhesion between said substrate and said moisture sensitive film.

    摘要翻译: 一种湿度传感器,包括基底,在所述基底上形成有羟基的湿敏聚合物膜,在所述湿敏膜上形成的电极和设置在所述基底和所述湿敏膜之间的化学改性层,所述化学改性层具有化学 所述基材和所述湿敏膜的粘结强度由此增加所述基材和所述湿敏膜之间的粘合力。

    Silicon micro sensor and manufacturing method therefor
    9.
    发明授权
    Silicon micro sensor and manufacturing method therefor 失效
    硅微传感器及其制造方法

    公开(公告)号:US5310610A

    公开(公告)日:1994-05-10

    申请号:US981898

    申请日:1992-11-20

    IPC分类号: G01L1/18 G01L9/00 G03C3/00

    摘要: A silicon micro sensor including a silicon substrate, a support element formed over an etched portion of the silicon substrate and a sensor element formed on the support element wherein the support element has a double layered structure including a silicon oxide film formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film formed on the silicon oxide film using the sputtering method.

    摘要翻译: 一种硅微传感器,包括硅衬底,形成在硅衬底的蚀刻部分上的支撑元件和形成在支撑元件上的传感器元件,其中支撑元件具有双层结构,其包括在硅衬底上形成的氧化硅膜,其使用 热氧化法和使用溅射法形成在氧化硅膜上的氧化铝膜。

    Thermal flow sensor
    10.
    发明授权
    Thermal flow sensor 失效
    热流量传感器

    公开(公告)号:US5108193A

    公开(公告)日:1992-04-28

    申请号:US644735

    申请日:1991-01-23

    IPC分类号: G01F1/684 H04N3/08 H04N3/09

    CPC分类号: G01F1/6845 H04N3/08 H04N3/09

    摘要: A thermal flow sensor comprising a substrate which can be etched, an electrical insulating film which is formed on said substrate and which has an etching characteristic different from that of said substrate, a heating resistor which is disposed on said insulating film, and a fluid temperature sensing resistor which is disposed on said insulating film at a certain distance from said heating resistor, the portion of said substrate corresponding to at least one of the heating resistor and the fluid temperature sensing resistor and the vicinity thereof being etched.

    摘要翻译: 一种热流传感器,包括可被蚀刻的衬底,形成在所述衬底上并且具有与所述衬底不同的蚀刻特性的电绝缘膜,设置在所述绝缘膜上的加热电阻器和流体温度 感测电阻器,其设置在距所述加热电阻器一定距离处的所述绝缘膜上,所述衬底的对应于加热电阻器和流体温度感测电阻器及其附近中的至少一个的部分被蚀刻。