公开(公告)号：US07413858B2

公开(公告)日：2008-08-19

申请号：US10824527

申请日：2004-04-15

申请人： Bum-Joon Kim ,  Chang-Jin Kim ,  Young Hwan Ko ,  Jeong-Sam Koh ,  Dong-Jin Park ,  Hyang Burm Lee ,  Hong Kim ,  Sun-hyun Kim

发明人： Bum-Joon Kim ,  Chang-Jin Kim ,  Young Hwan Ko ,  Jeong-Sam Koh ,  Dong-Jin Park ,  Hyang Burm Lee ,  Hong Kim ,  Sun-hyun Kim

IPC分类号： C12Q1/68 ,  C12P19/34 ,  C07H21/02 ,  C07H21/04

CPC分类号： C12Q1/6895 ,  C07H21/04

摘要： Disclosed is a method for identifying Streptomyces species using groEL2 gene that can compensate for drawbacks of conventional methods of morphologic classification and 16S rDNA identification being time-consuming, unfaithful, and expensive, thus enabling to efficiently identify Streptomyces species.

摘要翻译： 公开了使用groEL2基因鉴定链霉菌属物种的方法，该方法可以补偿常规方法的形态分类的缺点，并且16S rDNA鉴定是耗时，不忠实且昂贵的，因此能够有效地鉴定链霉菌属物种。

公开(公告)号：US20130313654A1

公开(公告)日：2013-11-28

申请号：US13955737

申请日：2013-07-31

申请人： Oh-kyum Kwon ,  Tae-jung Lee ,  Sun-hyun Kim

发明人： Oh-kyum Kwon ,  Tae-jung Lee ,  Sun-hyun Kim

IPC分类号： H01L27/088

CPC分类号： H01L27/088 ,  H01L21/76229 ,  H01L21/823462 ,  H01L21/823481 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes a substrate having adjacent first and second regions, and a device isolation structure in the substrate between the first and second regions. The first and second regions of the substrate may respectively include transistors configured to be driven at different operational voltages, and the device isolation structure may electrically separates the transistors of the first region from the transistors of the second region. The device isolation structure includes outer portions immediately adjacent to the first and second regions and an inner portion therebetween. The outer portions of the device isolation structure comprise a material having an etching selectivity with respect to that of the inner portion. Related devices and fabrication methods are also discussed.

摘要翻译： 集成电路器件包括具有相邻的第一和第二区域的衬底，以及在第一和第二区域之间的衬底中的器件隔离结构。 衬底的第一和第二区域可以分别包括被配置为以不同的工作电压驱动的晶体管，并且器件隔离结构可以将第一区域的晶体管与第二区域的晶体管电隔离。 装置隔离结构包括紧邻第一和第二区域的外部部分和它们之间的内部部分。 器件隔离结构的外部部分包括相对于内部部分具有蚀刻选择性的材料。 还讨论了相关设备和制造方法。

公开(公告)号：US08525273B2

公开(公告)日：2013-09-03

申请号：US13017984

申请日：2011-01-31

申请人： Oh-kyum Kwon ,  Tae-jung Lee ,  Sun-hyun Kim

发明人： Oh-kyum Kwon ,  Tae-jung Lee ,  Sun-hyun Kim

IPC分类号： H01L27/088

CPC分类号： H01L27/088 ,  H01L21/76229 ,  H01L21/823462 ,  H01L21/823481 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes a substrate having adjacent first and second regions, and a device isolation structure in the substrate between the first and second regions. The first and second regions of the substrate may respectively include transistors configured to be driven at different operational voltages, and the device isolation structure may electrically separates the transistors of the first region from the transistors of the second region. The device isolation structure includes outer portions immediately adjacent to the first and second regions and an inner portion therebetween. The outer portions of the device isolation structure comprise a material having an etching selectivity with respect to that of the inner portion. Related devices and fabrication methods are also discussed.

摘要翻译： 集成电路器件包括具有相邻的第一和第二区域的衬底，以及在第一和第二区域之间的衬底中的器件隔离结构。 衬底的第一和第二区域可以分别包括被配置为以不同的工作电压驱动的晶体管，并且器件隔离结构可以将第一区域的晶体管与第二区域的晶体管电隔离。 装置隔离结构包括紧邻第一和第二区域的外部部分和它们之间的内部部分。 器件隔离结构的外部部分包括相对于内部部分具有蚀刻选择性的材料。 还讨论了相关设备和制造方法。

公开(公告)号：US20080135970A1

公开(公告)日：2008-06-12

申请号：US11947066

申请日：2007-11-29

申请人： Yong-don Kim ,  Sun-hyun Kim ,  Jung-soo Yoo ,  Ji-hoon Cho ,  Seung-teck Lee

发明人： Yong-don Kim ,  Sun-hyun Kim ,  Jung-soo Yoo ,  Ji-hoon Cho ,  Seung-teck Lee

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/402

摘要： High voltage schottky diodes are provided including a first conductivity type semiconductor substrate and a second conductivity type well region defined by the substrate. A first conductive film is provided on a surface of the substrate including the well. A conductive electrode is provided on at least one side of the first conductive film above the substrate including the well. An insulating film is provided between the conductive electrode and the substrate. A cathode contact region is provided outside the conductive electrode remote from the first conductive film. The cathode contact region is doped with high concentration impurities having a second conductive type.

摘要翻译： 提供了高压肖特基二极管，其包括由衬底限定的第一导电类型半导体衬底和第二导电类型阱区。 在包括该阱的基板的表面上设置第一导电膜。 导电电极设置在第一导电膜的至少一侧上方的包括该阱的基板上。 在导电电极和基板之间设置绝缘膜。 阴极接触区域设置在远离第一导电膜的导电电极的外侧。 阴极接触区域掺杂有具有第二导电类型的高浓度杂质。