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1.发明授权Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities 失效形成具有浅受主电导率的氧化锌基II-VI化合物半导体层的方法公开(公告)号：US07723154B1
公开(公告)日：2010-05-25
申请号：US11551058
申请日：2006-10-19
IPC分类号： H01L21/00
CPC分类号： H01L21/02565 , H01L21/0237 , H01L21/02554 , H01L21/02573 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/425
摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.
摘要翻译： p型ZnO基II-VI化合物半导体层在其中具有大于约1×1017cm-3的净p型掺杂剂浓度的银，钾和/或金掺杂剂。 形成层的方法包括使用原子层沉积（ALD）技术。 这种技术包括将基底暴露于气体组合中：在处理时间间隔内以至少两个浓度水平重复过渡浓度的锌的第一反应气体，含有氧的第二反应气体和p型掺杂气体 含有选自银，钾和金的至少一种p型掺杂剂物质。 第二反应气体中的氧浓度也可以在至少两个浓度水平之间重复地转变。 第一反应气体中的锌的浓度和第二反应气体中的氧浓度可以以交替的顺序转变，使得第一反应气体中相对较高的锌浓度与第二反应气体中相对较低的氧浓度重叠， 反之亦然。
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公开(公告)号：US07829376B1
公开(公告)日：2010-11-09
申请号：US12755499
申请日：2010-04-07
IPC分类号： H01L21/00
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02623
摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.
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