公开(公告)号：US20130043468A1

公开(公告)日：2013-02-21

申请号：US13588810

申请日：2012-08-17

申请人： Bunmi T. ADEKORE

发明人： Bunmi T. ADEKORE

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66446 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66924 ,  H01L29/66969 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7813 ,  H01L29/8083

摘要： A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

摘要翻译： 诸如垂直金属场效应晶体管的晶体管可以包括包括ZnO基材料的衬底，以及设置在衬底的第一侧上的结构，该衬底包括AlGaN基材料和设置在衬底的第二面上的电极 。 晶体管还可以包括多个半导体层和设置在多个半导体层和电极材料之间的电介质层。

公开(公告)号：US08772829B2

公开(公告)日：2014-07-08

申请号：US12951308

申请日：2010-11-22

申请人： Bunmi T. Adekore ,  Jonathan Pierce

发明人： Bunmi T. Adekore ,  Jonathan Pierce

IPC分类号： H01L31/102

CPC分类号： C30B25/18 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/0087 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

摘要翻译： 提供了形成平面氧化锌基外延层，相关异质结构和器件的方法。

公开(公告)号：US07723154B1

公开(公告)日：2010-05-25

申请号：US11551058

申请日：2006-10-19

申请人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis ,  George B. Kenney

发明人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis ,  George B. Kenney

IPC分类号： H01L21/00

CPC分类号： H01L21/02565 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/425

摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

摘要翻译： p型ZnO基II-VI化合物半导体层在其中具有大于约1×1017cm-3的净p型掺杂剂浓度的银，钾和/或金掺杂剂。 形成层的方法包括使用原子层沉积（ALD）技术。 这种技术包括将基底暴露于气体组合中：在处理时间间隔内以至少两个浓度水平重复过渡浓度的锌的第一反应气体，含有氧的第二反应气体和p型掺杂气体 含有选自银，钾和金的至少一种p型掺杂剂物质。 第二反应气体中的氧浓度也可以在至少两个浓度水平之间重复地转变。 第一反应气体中的锌的浓度和第二反应气体中的氧浓度可以以交替的顺序转变，使得第一反应气体中相对较高的锌浓度与第二反应气体中相对较低的氧浓度重叠， 反之亦然。

公开(公告)号：US10935539B1

公开(公告)日：2021-03-02

申请号：US15725233

申请日：2017-10-04

申请人： Bunmi T. Adekore

发明人： Bunmi T. Adekore

IPC分类号： G01N33/48 ,  G01N33/487 ,  G01N21/31 ,  G01N21/65 ,  G01N21/47 ,  G01N33/53 ,  G01N21/64 ,  A61B10/00 ,  G01N33/483 ,  G01N33/493

摘要： In an embodiment, a system for analyzing excreta, wherein the system is configured to collect and analyze at least a portion of an excreta, wherein at least a portion of the system is configured to be embedded in an excreta disposal unit, and wherein the system comprises at least one electronic device. In a further embodiment, an analysis system for analyzing excreta, comprises a first portion configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and a second portion configured to homogenize the at least a portion of the excreta collected by the first portion. In a further embodiment, an analysis system for analyzing excreta comprises a first portion of configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and wherein the analysis system is configured to detect analyte from multiple users.

公开(公告)号：US20090269879A1

公开(公告)日：2009-10-29

申请号：US12421133

申请日：2009-04-09

申请人： Bunmi T. Adekore ,  Jonathan Pierce

发明人： Bunmi T. Adekore ,  Jonathan Pierce

IPC分类号： H01L21/365 ,  C23C16/00

CPC分类号： C23C16/407 ,  C23C16/4481 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

摘要： A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate.

摘要翻译： 金属有机化学气相沉积的方法包括将凝结物质源转化为提供第一气体，所述源包括选自金，银和钾的至少一种元素。 该方法还包括提供包含锌的第二气体和包含氧的第三气体，将第一气体，第二气体和第三气体输送到衬底，以及在衬底上形成p型氧化锌基半导体层。

公开(公告)号：US20210132031A1

公开(公告)日：2021-05-06

申请号：US16974331

申请日：2021-01-04

申请人： Bunmi T. Adekore

发明人： Bunmi T. Adekore

IPC分类号： G01N33/487 ,  G01N21/64 ,  G01N21/31 ,  G01N21/47 ,  G01N33/53 ,  A61B10/00 ,  G01N21/65

摘要： A system for analyzing excreta includes at least a portion configured to be embedded in a toilet and to collect at least a portion of excreta, and includes a plurality of rotating chambers assigned uniquely to each user and configured to produce a supernatant from the collected excreta, and wherein the system is configured to analyze excreta from multiple users and associate results with each of the multiple users. A method for analyzing excreta comprises collecting at least a portion of excreta from a toilet using a system that is at least partially embedded in the toilet, generating acoustic waves that solubilize the collected excreta, and analyzing the solubilized collected excreta. A method for analyzing excreta comprises collecting at least a portion of excreta from a toilet using a system that is at least partially embedded in the toilet, and acquiring assay data from the collected excreta utilizing an optical disc reader.

公开(公告)号：US09112048B2

公开(公告)日：2015-08-18

申请号：US13588810

申请日：2012-08-17

申请人： Bunmi T. Adekore

发明人： Bunmi T. Adekore

IPC分类号： H01L29/78 ,  H01L29/808 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/22 ,  H01L29/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66446 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66924 ,  H01L29/66969 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7813 ,  H01L29/8083

摘要： A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

摘要翻译： 诸如垂直金属场效应晶体管的晶体管可以包括包括ZnO基材料的衬底，以及设置在衬底的第一侧上的结构，该衬底包括AlGaN基材料和设置在衬底的第二面上的电极 。 晶体管还可以包括多个半导体层和设置在多个半导体层和电极材料之间的电介质层。

公开(公告)号：US20110062440A1

公开(公告)日：2011-03-17

申请号：US12951308

申请日：2010-11-22

申请人： Bunmi T. Adekore ,  Jonathan Pierce

发明人： Bunmi T. Adekore ,  Jonathan Pierce

IPC分类号： H01L29/22 ,  H01L21/36

CPC分类号： C30B25/18 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/0087 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

摘要翻译： 提供了形成平面氧化锌基外延层，相关异质结构和器件的方法。

公开(公告)号：US07829376B1

公开(公告)日：2010-11-09

申请号：US12755499

申请日：2010-04-07

申请人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis

发明人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis

IPC分类号： H01L21/00

CPC分类号： H01L21/02565 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02623

摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

公开(公告)号：US20100133529A1

公开(公告)日：2010-06-03

申请号：US12563649

申请日：2009-09-21

申请人： Gianni TARASCHI ,  Bunmi T. ADEKORE ,  Jonathan PIERCE

发明人： Gianni TARASCHI ,  Bunmi T. ADEKORE ,  Jonathan PIERCE

IPC分类号： H01L33/00 ,  H01L29/12 ,  H01L21/04

CPC分类号： H01L33/0079 ,  G03B21/28 ,  H01L33/22 ,  H01L33/24 ,  H01L33/28 ,  H01L2224/13 ,  H01L2933/0091

摘要： A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

摘要翻译： 诸如发光二极管（LED）的发光器件在包括ZnO基材料的衬底上生长。 该结构包括多个半导体层和设置在多个半导体层之间的有源层。 将器件从衬底移除，或者衬底基本上变薄以提高器件的发光效率。