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    Device and method for providing wavelength reduction with a photomask
    3.
    发明授权
    Device and method for providing wavelength reduction with a photomask 有权
    用光掩模提供波长缩小的装置和方法

    公开(公告)号：US08563198B2

    公开(公告)日：2013-10-22

    申请号：US13160231

    申请日：2011-06-14

    申请人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    发明人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC分类号： G03F1/46 ,  G03F1/48

    CPC分类号： G03F1/50 ,  G03F1/46

    摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    摘要翻译： 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK
    4.
    发明申请
    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK 有权
    用光源提供波长减小的装置和方法

    公开(公告)号：US20110244378A1

    公开(公告)日：2011-10-06

    申请号：US13160231

    申请日：2011-06-14

    申请人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    发明人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC分类号： G03F1/00 ,  G03F7/20

    CPC分类号： G03F1/50 ,  G03F1/46

    摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    摘要翻译： 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    Immersion optical projection system
    5.
    发明授权
    Immersion optical projection system 有权
    浸入式光学投影系统

    公开(公告)号：US07180572B2

    公开(公告)日：2007-02-20

    申请号：US11009505

    申请日：2004-12-10

    申请人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    发明人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    IPC分类号： G03B27/42

    CPC分类号： G03F7/70341

    摘要： An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.

    摘要翻译： 提供了一种用于光刻的浸没式光学投影系统。 在使用系统期间，透明板位于最后一个透镜元件和晶片之间。 透明板具有透镜侧表面和晶片侧表面。 该系统适于具有位于最后透镜元件和透明板的透镜侧表面之间的透镜侧流体层，例如当光刻工艺期间最后一个透镜元件可操作地位于晶片上方时。 该系统还适于在系统的使用期间具有位于透明板的晶片侧表面和晶片之间的晶片侧流体层。 晶片侧流体可以或可以不流体地连接到透镜侧流体。 晶片侧流体可以或可以不与透镜侧流体不同。

    Immersion optical projection system
    6.
    发明申请
    Immersion optical projection system 有权
    浸入式光学投影系统

    公开(公告)号：US20050286030A1

    公开(公告)日：2005-12-29

    申请号：US11009505

    申请日：2004-12-10

    申请人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    发明人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70341

    摘要： An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.

    摘要翻译： 提供了一种用于光刻的浸没式光学投影系统。 在使用系统期间，透明板位于最后一个透镜元件和晶片之间。 透明板具有透镜侧表面和晶片侧表面。 该系统适于具有位于最后透镜元件和透明板的透镜侧表面之间的透镜侧流体层，例如当光刻工艺期间最后一个透镜元件可操作地位于晶片上方时。 该系统还适于在系统的使用期间具有位于透明板的晶片侧表面和晶片之间的晶片侧流体层。 晶片侧流体可以或可以不流体地连接到透镜侧流体。 晶片侧流体可以或可以不与透镜侧流体不同。

    Device and method for providing wavelength reduction with a photomask
    7.
    发明申请
    Device and method for providing wavelength reduction with a photomask 审中-公开
    用光掩模提供波长缩小的装置和方法

    公开(公告)号：US20050100798A1

    公开(公告)日：2005-05-12

    申请号：US10964842

    申请日：2004-10-13

    申请人： Burn Lin ,  Jeng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    发明人： Burn Lin ,  Jeng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC分类号： G03C5/00 ,  G03F1/46 ,  G03F1/54 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00

    CPC分类号： G03F1/50 ,  G03F1/46

    摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    摘要翻译： 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control
    9.
    发明申请
    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 失效
    监测热板温度的散射方法，促进关键尺寸控制

    公开(公告)号：US20070068453A1

    公开(公告)日：2007-03-29

    申请号：US11549306

    申请日：2006-10-13

    申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    IPC分类号： B05C13/02 ,  B05C11/00

    CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

    摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

    摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control
    10.
    发明授权
    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 失效
    监测热板温度的散射方法，促进关键尺寸控制

    公开(公告)号：US07751025B2

    公开(公告)日：2010-07-06

    申请号：US11549306

    申请日：2006-10-13

    申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    IPC分类号： G03B27/32 ,  G03D5/00 ,  B05C11/00

    CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

    摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

    摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。