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    Complementary replacement of material
    3.
    发明授权
    Complementary replacement of material 有权
    补充材料更换

    公开(公告)号：US07399709B1

    公开(公告)日：2008-07-15

    申请号：US10256401

    申请日：2002-09-27

    申请人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

    发明人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76808 ,  H01L2221/1026

    摘要： An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.

    摘要翻译： 描述了去除抗蚀剂的耐蚀刻性要求的图像反转方法。 由岛，线或沟槽组成的高分辨率抗蚀剂图案通过暴露于包括相位边缘掩模的一个或多个掩模以及可选地具有分辨率增强技术而由大的工艺窗口形成。 由有机聚合物或诸如氟硅酸盐玻璃的材料组成的互补材料置换（CMR）层被涂覆在抗蚀剂图案上。 同时蚀刻CMR和抗蚀剂层以在CMR层中提供图像反转图案，其被蚀刻转移到衬底中。 该方法避免了像蚀刻图案中的鸟喙缺陷那样的边缘粗糙度，并且可用于包括在电介质层中形成接触孔，形成多晶硅栅极以及在镶嵌工艺中形成沟槽的应用。 对于需要图像反转方案的直接写入方法也是有价值的。

    OPTICAL PROXIMITY CORRECTION CONVERGENCE CONTROL
    5.
    发明申请
    OPTICAL PROXIMITY CORRECTION CONVERGENCE CONTROL 有权
    光临近度校正综合控制

    公开(公告)号：US20130205265A1

    公开(公告)日：2013-08-08

    申请号：US13368919

    申请日：2012-02-08

    申请人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    发明人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70441 ,  G03F7/70125

    摘要： A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

    摘要翻译： 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查与相对小的EPE，MEEF和DOM一致性的第一OPC设置与限定的门间距的第一模板。

    Optical proximity correction convergence control
    7.
    发明授权
    Optical proximity correction convergence control 有权
    光学接近校正收敛控制

    公开(公告)号：US08656319B2

    公开(公告)日：2014-02-18

    申请号：US13368919

    申请日：2012-02-08

    申请人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    发明人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70441 ,  G03F7/70125

    摘要： A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

    摘要翻译： 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查第一OPC设置以获得相对较小的EPE，MEEF和DOM与限定的门间距的第一模板的一致性。

    Removal of line end shortening in microlithography and mask set for removal
    9.
    发明授权
    Removal of line end shortening in microlithography and mask set for removal 有权
    在微光刻和掩模组中去除线端缩短以进行去除

    公开(公告)号：US06492073B1

    公开(公告)日：2002-12-10

    申请号：US09839926

    申请日：2001-04-23

    申请人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

    发明人： Burn Jeng Lin ,  Ru-Gun Liu ,  Shih-Ying Chen ,  Shinn-Sheng Yu ,  Hua-Tai Lin ,  Anthony Yen ,  Yao-Ching Ku

    IPC分类号： G03F900

    CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70441

    摘要： A mask set of two masks and a method of using these masks in a double exposure to avoid line shortening due to optical proximity effects is described. A pattern having pattern elements comprising a number of line segments, wherein each of the line segments has one or two free ends which are not connected to other mask pattern elements is to be transferred to a layer of resist. A first mask is formed by adding line extensions to each of the free ends of the line segments. A cutting mask is formed comprising rectangles enclosing each of the line extensions wherein one of the sides of said rectangles is coincident with the corresponding free end of said line segment. The first mask has opaque regions corresponding to the extended line segments. The cutting mask has transparent regions corresponding to the cutting pattern. In another embodiment a pattern having pattern openings comprising a number of line segments. In this embodiment the cutting pattern comprises rectangles having the same width as said line segments and add length to the line segments.

    摘要翻译： 描述了两个掩模的掩模组和在双重曝光中使用这些掩模以避免由于光学邻近效应引起的线缩短的方法。 具有包括多个线段的图形元素的图案，其中每个线段具有未连接到其它掩模图案元件的一个或两个自由端将被转移到抗蚀剂层。 通过向线段的每个自由端添加线延伸来形成第一掩模。 形成切割掩模，其包括围绕每个线延伸的矩形，其中所述矩形的一个侧面与所述线段的对应的自由端重合。 第一掩模具有对应于延伸线段的不透明区域。 切割掩模具有对应于切割图案的透明区域。 在另一个实施例中，具有包括多个线段的图案开口的图案。 在该实施例中，切割图案包括具有与所述线段相同宽度的矩形，并且对线段增加长度。