公开(公告)号：US07273789B2

公开(公告)日：2007-09-25

申请号：US11227503

申请日：2005-09-15

申请人： Byoung Gue Min ,  Jong Min Lee ,  Seong Il Kim ,  Chul Won Ju ,  Kyung Ho Lee

发明人： Byoung Gue Min ,  Jong Min Lee ,  Seong Il Kim ,  Chul Won Ju ,  Kyung Ho Lee

IPC分类号： H01L21/331

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： Provided is a method of fabricating a heterojunction bipolar transistor (HBT). The method includes: sequentially depositing a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter capping layer on a substrate; forming an emitter electrode on the emitter capping layer; forming a mesa type emitter to expose the base layer by sequentially etching the emitter capping layer and the emitter layer using the emitter electrode as an etch mask in vertical and negative-sloped directions to the substrate, respectively; and forming a base electrode on the exposed base layer using the emitter electrode as a mask in self-alignment with the emitter electrode. In this method, a distance between the mesa type emitter and the base electrode can be minimized and reproducibly controlled. Also, a self-aligned device with an excellent high-frequency characteristic can be embodied.

摘要翻译： 提供了一种制造异质结双极晶体管（HBT）的方法。 该方法包括：在衬底上依次沉积副集电极层，集电极层，基极层，发射极层和发射极覆盖层; 在发射极盖层上形成发射电极; 通过使用发射极电极作为蚀刻掩模，分别在垂直和负向倾斜的方向上依次蚀刻发射极覆盖层和发射极层来形成台面型发射极以暴露基底层; 以及使用发射电极作为与发射极电极自对准的掩模，在所述暴露的基底层上形成基极。 在这种方法中，台面型发射极和基极之间的距离可以被最小化并可重复地控制。 此外，可以实现具有优异的高频特性的自对准装置。