公开(公告)号：US07273789B2

公开(公告)日：2007-09-25

申请号：US11227503

申请日：2005-09-15

申请人： Byoung Gue Min ,  Jong Min Lee ,  Seong Il Kim ,  Chul Won Ju ,  Kyung Ho Lee

发明人： Byoung Gue Min ,  Jong Min Lee ,  Seong Il Kim ,  Chul Won Ju ,  Kyung Ho Lee

IPC分类号： H01L21/331

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： Provided is a method of fabricating a heterojunction bipolar transistor (HBT). The method includes: sequentially depositing a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter capping layer on a substrate; forming an emitter electrode on the emitter capping layer; forming a mesa type emitter to expose the base layer by sequentially etching the emitter capping layer and the emitter layer using the emitter electrode as an etch mask in vertical and negative-sloped directions to the substrate, respectively; and forming a base electrode on the exposed base layer using the emitter electrode as a mask in self-alignment with the emitter electrode. In this method, a distance between the mesa type emitter and the base electrode can be minimized and reproducibly controlled. Also, a self-aligned device with an excellent high-frequency characteristic can be embodied.

摘要翻译： 提供了一种制造异质结双极晶体管（HBT）的方法。 该方法包括：在衬底上依次沉积副集电极层，集电极层，基极层，发射极层和发射极覆盖层; 在发射极盖层上形成发射电极; 通过使用发射极电极作为蚀刻掩模，分别在垂直和负向倾斜的方向上依次蚀刻发射极覆盖层和发射极层来形成台面型发射极以暴露基底层; 以及使用发射电极作为与发射极电极自对准的掩模，在所述暴露的基底层上形成基极。 在这种方法中，台面型发射极和基极之间的距离可以被最小化并可重复地控制。 此外，可以实现具有优异的高频特性的自对准装置。

公开(公告)号：US07494909B2

公开(公告)日：2009-02-24

申请号：US11499116

申请日：2006-08-03

申请人： Chull Won Ju ,  Byoung Gue Min ,  Seong Il Kim ,  Jong Min Lee ,  Kyung Ho Lee ,  Young Il Kang

发明人： Chull Won Ju ,  Byoung Gue Min ,  Seong Il Kim ,  Jong Min Lee ,  Kyung Ho Lee ,  Young Il Kang

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/46 ,  H01L21/44 ,  H01L29/40 ,  H01L23/02

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

摘要： Provided are a chip, a chip stack, and a method of manufacturing the same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.

摘要翻译： 提供一种芯片，芯片堆叠及其制造方法。 多个芯片，每个芯片包括：形成在晶片上的至少一个焊盘; 并且从晶片的底部突出到预定厚度并且形成在露出焊盘底部的通孔中的金属层被堆叠成使得焊盘和相邻芯片的金属层接合。 这导致了简化的制造工艺，高芯片性能和用于芯片堆叠的小占地面积。

公开(公告)号：US20120143431A1

公开(公告)日：2012-06-07

申请号：US13173461

申请日：2011-06-30

申请人： Sang Ki Kim ,  Suk Young Rho ,  Don Hyoung Lee ,  Jeong Hwan Hwang ,  Jeong Yeol Kim ,  Seong Il Kim

发明人： Sang Ki Kim ,  Suk Young Rho ,  Don Hyoung Lee ,  Jeong Hwan Hwang ,  Jeong Yeol Kim ,  Seong Il Kim

IPC分类号： G06F7/00

CPC分类号： G05B23/0216

摘要： The present invention provides a diagnostic apparatus using a microphone. More specifically, the diagnostic apparatus utilizes a first microphone, a second microphone, a first unit, a controller and second unit. The first microphone is positioned within an engine compartment and the second microphone is positioned within an interior of a vehicle to receive the noise. The second unit records the noise inputted through the first microphone or the second microphone or both and the controller analyzes and diagnoses a vehicle utilizing the noise recorded by the first unit to determine if a failure in the vehicle has occurred. When a vehicle failure is detected by the controller, the second unit then notifies a user of the location of a failed part in the vehicle.

摘要翻译： 本发明提供一种使用麦克风的诊断装置。 更具体地，诊断装置利用第一麦克风，第二麦克风，第一单元，控制器和第二单元。 第一麦克风位于发动机舱内，第二麦克风位于车辆的内部以接收噪音。 第二单元记录通过第一麦克风或第二麦克风或两者输入的噪声，并且控制器利用由第一单元记录的噪声来分析和诊断车辆，以确定车辆是否发生故障。 当控制器检测到车辆故障时，第二单元然后向用户通知车辆中故障部件的位置。

公开(公告)号：US08872816B2

公开(公告)日：2014-10-28

申请号：US13425873

申请日：2012-03-21

申请人： Seong Il Kim ,  Bae Won Lee ,  San Seong Seomun ,  Ja Hun Koo ,  Woon-Rok Jang ,  Su-Han Woo

发明人： Seong Il Kim ,  Bae Won Lee ,  San Seong Seomun ,  Ja Hun Koo ,  Woon-Rok Jang ,  Su-Han Woo

IPC分类号： G06T15/00 ,  H04N13/04 ,  G09G3/34 ,  G09G3/00

CPC分类号： G09G3/34 ,  G09G3/003 ,  G09G2310/0237 ,  G09G2310/08 ,  G09G2320/0209 ,  H04N13/337 ,  H04N13/341

摘要： A three-dimensional image display device includes: a display panel assembly including a display panel including pixels which alternately displays first and second images, and a data driver which transmits data voltages to the pixels; a backlight unit which provides light to the display panel assembly; and a shutter member including first and second shutters, where the backlight unit emits the light during light emitting periods, the light emitting periods includes first light emitting periods, during which the first image is displayed, and second light emitting periods, during which the second image is displayed, the first light emitting periods and the second light emitting periods alternate, and the first shutter is opened during at least two open periods, which are between neighboring second light emitting periods of the second light emitting periods and temporally spaced apart from each other.

摘要翻译： 三维图像显示装置包括：显示面板组件，包括显示面板，显示面板包括交替显示第一和第二图像的像素;以及数据驱动器，其向像素传输数据电压; 背光单元，其向显示面板组件提供光; 以及包括第一和第二快门的快门部件，其中所述背光单元在发光周期期间发光，所述发光周期包括显示所述第一图像的第一发光周期和所述第二发光周期， 显示第一发光周期和第二发光周期的第一发光周期和第二发光周期交替，并且第一快门在至少两个打开周期期间打开，该至少两个打开周期在第二发光周期的相邻的第二发光周期之间并且与每个开启周期的时间间隔开 其他。

公开(公告)号：US20080160292A1

公开(公告)日：2008-07-03

申请号：US11966552

申请日：2007-12-28

申请人： Young Hwan Kim ,  Woon Jo Cho ,  Seong Il Kim ,  Chun Keun Kim ,  Yong Tae Kim

发明人： Young Hwan Kim ,  Woon Jo Cho ,  Seong Il Kim ,  Chun Keun Kim ,  Yong Tae Kim

IPC分类号： B32B5/16 ,  B05D3/02 ,  B05D3/04

CPC分类号： C30B29/60 ,  C30B29/16 ,  Y10S977/774 ,  Y10T428/259

摘要： A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.

摘要翻译： 直接在硅衬底上制备ZnO纳米晶体的方法包括以下步骤：（S1）在硅衬底上形成Zn-Si-O复合薄膜; 和（S 2）对所得薄膜进行热处理。 特别地，通过控制Zn-Si-O复合薄膜的组成和其加热温度，在非晶Zn-Si-O复合薄膜中形成ZnO纳米晶体。 利用本发明的用于在硅衬底上直接制备ZnO纳米晶体的方法，为了在使用硅衬底中将ZnO纳米晶体应用于光电子器件，开辟了更多的可能性。

公开(公告)号：US06392921B1

公开(公告)日：2002-05-21

申请号：US09900184

申请日：2001-07-09

申请人： Yong Tae Kim ,  Chun Keun Kim ,  Seong Il Kim ,  Sun Il Shim

发明人： Yong Tae Kim ,  Chun Keun Kim ,  Seong Il Kim ,  Sun Il Shim

IPC分类号： G11C1100

CPC分类号： G11C11/22

摘要： The driving circuit for an NDRO-FRAM includes several NDRO-FRAM (Non Destructive Non Volatile Ferroelectric Random Access Memory) cells each having a drain, a bulk, a source and a gate and arranged as a matrix. A plurality of reading word lines are separately connected to each drain of the NDRO-FRAM cells arranged in columns, and a plurality of writing word lines are separately connected to each bulk of the NDRO-FRM cells arranged in columns. Several data level transmission circuits for transmitting a data level of the NDRO-FRAM cells are also included, which are connected to a plurality of data level transmission circuits. Accordingly, the present invention is capable of reading and writing of data on the NDRO-FRAM cells.

摘要翻译： NDRO-FRAM的驱动电路包括几个NDRO-FRAM（非破坏性非易失性铁电随机存取存储器）单元，每个单元具有漏极，体积，源极和栅极并且被布置为矩阵。 多个读取字线分别连接到排列成列的NDRO-FRAM单元的每个漏极，并且多个写入字线分别连接到以列布置的NDRO-FRM单元的大部分。 还包括用于发送NDRO-FRAM单元的数据电平的几个数据电平传输电路，其连接到多个数据电平传输电路。 因此，本发明能够读取和写入NDRO-FRAM单元上的数据。