Thin film transistor substrate, display device having the same and method of manufacturing the display device
    8.
    发明授权
    Thin film transistor substrate, display device having the same and method of manufacturing the display device 有权
    薄膜晶体管基板,具有相同的显示装置和制造显示装置的方法

    公开(公告)号:US08409916B2

    公开(公告)日:2013-04-02

    申请号:US13233399

    申请日:2011-09-15

    IPC分类号: H01L21/00 H01L21/16

    CPC分类号: H01L29/7869 H01L27/1225

    摘要: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    摘要翻译: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层,其中所述金属氧化物具有小于或等于3%的氧缺陷,并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3%的氧缺陷,并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬,钴,镍,铁,锰及其混合物中的至少一种3d过渡金属。

    Thin film transistor substrate, display device having the same and method of manufacturing the display device
    9.
    发明授权
    Thin film transistor substrate, display device having the same and method of manufacturing the display device 有权
    薄膜晶体管基板,具有相同的显示装置和制造显示装置的方法

    公开(公告)号:US08035100B2

    公开(公告)日:2011-10-11

    申请号:US12197573

    申请日:2008-08-25

    IPC分类号: H01L29/12

    CPC分类号: H01L29/7869 H01L27/1225

    摘要: A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    摘要翻译: 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层,其中所述金属氧化物具有小于或等于3%的氧缺陷,并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3%的氧缺陷,并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬,钴,镍,铁,锰及其混合物中的至少一种3d过渡金属。