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    Liquid crystal display panel and fabricating method thereof
    1.
    发明授权
    Liquid crystal display panel and fabricating method thereof 有权
    液晶显示面板及其制造方法

    公开(公告)号：US07166864B2

    公开(公告)日：2007-01-23

    申请号：US10963925

    申请日：2004-10-14

    申请人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Heung Lyul Cho ,  Seung Hee Nam ,  Jae Young Oh

    发明人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Heung Lyul Cho ,  Seung Hee Nam ,  Jae Young Oh

    IPC分类号： H01L29/04

    CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66742

    摘要： A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

    摘要翻译： 液晶显示器（LCD）面板以较少数量的掩模工艺制造，并且包括薄膜晶体管（TFT）阵列基板和滤色器阵列基板。 TFT阵列基板包括彼此绝缘交叉以限定像素区域的栅极和数据线，设置在栅极和数据线的交叉处的TFT，保护TFT的钝化膜，与TFT部分重叠的像素电极，栅极 焊盘连接到栅极线，以及连接到数据线的数据焊盘。 栅极线，栅极和数据焊盘以及像素电极包括透明导电材料。 栅极金属材料在透明导电材料上，其中TFT部分地与像素电极重叠。 去除栅极和数据焊盘上的钝化膜以暴露包括在栅极和数据焊盘内的透明导电材料。

    Liquid crystal display panel and fabricating method thereof
    4.
    发明授权
    Liquid crystal display panel and fabricating method thereof 有权
    液晶显示面板及其制造方法

    公开(公告)号：US07501298B2

    公开(公告)日：2009-03-10

    申请号：US11643653

    申请日：2006-12-22

    申请人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Heung Lyul Cho ,  Seung Hee Nam ,  Jae Young Oh

    发明人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Heung Lyul Cho ,  Seung Hee Nam ,  Jae Young Oh

    IPC分类号： H01L21/00

    CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66742

    摘要： A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

    摘要翻译： 液晶显示器（LCD）面板以较少数量的掩模工艺制造，并且包括薄膜晶体管（TFT）阵列基板和滤色器阵列基板。 TFT阵列基板包括彼此绝缘交叉以限定像素区域的栅极和数据线，设置在栅极和数据线的交叉处的TFT，保护TFT的钝化膜，与TFT部分重叠的像素电极，栅极 焊盘连接到栅极线，以及连接到数据线的数据焊盘。 栅极线，栅极和数据焊盘以及像素电极包括透明导电材料。 栅极金属材料在透明导电材料上，其中TFT部分地与像素电极重叠。 去除栅极和数据焊盘上的钝化膜以暴露包括在栅极和数据焊盘内的透明导电材料。

    Liquid crystal display panel of horizontal electronic field applying type and fabricating method thereof
    5.
    发明授权
    Liquid crystal display panel of horizontal electronic field applying type and fabricating method thereof 有权
    水平电子场应用型液晶显示面板及其制造方法

    公开(公告)号：US07369202B2

    公开(公告)日：2008-05-06

    申请号：US10963945

    申请日：2004-10-14

    申请人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Nack Bong Choi ,  Seung Hee Nam

    发明人： Byung Chul Ahn ,  Soon Sung Yoo ,  Oh Nam Kwon ,  Youn Gyoung Chang ,  Nack Bong Choi ,  Seung Hee Nam

    IPC分类号： G02F1/1343 ,  G02F1/136

    CPC分类号： G02F1/13458 ,  G02F1/134363 ,  G02F2001/136222 ,  G02F2001/136236

    摘要： An in plane switching (IPS) mode liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate with a TFT provided at a crossing of gate and data lines, a protective film protecting the TFT, a pixel electrode connected to the TFT, a common line substantially parallel to the pixel electrode, a common electrode connected to the common line to generate a horizontal electric field with the pixel electrode, and a pad including a transparent conductive material and connected to the gate line, the data line and/or the common line. A color filter array substrate is joined to, and overlaps a portion of, the TFT array substrate. Portions of the protective film where the color filter array substrate which do not overlap the TFT array substrate are removed to expose the transparent conductive material included in the pad.

    摘要翻译： 平面切换（IPS）模式液晶显示（LCD）面板以减少数量的掩模处理制造，并且包括具有设置在栅极和数据线的交叉处的TFT的薄膜晶体管（TFT）阵列基板，保护 TFT保护膜，连接到TFT的像素电极，基本上平行于像素电极的公共线，与公共线连接以产生与像素电极的水平电场的公共电极，以及包括透明导电材料的焊盘 并连接到栅极线，数据线和/或公共线。 滤色器阵列基板与TFT阵列基板接合并与其重叠。 除去与TFT阵列基板不重叠的滤色器阵列基板的保护膜的一部分，以露出包括在该焊盘中的透明导电材料。

    Thin film transistor substrate for display device and fabricating method thereof
    7.
    发明授权
    Thin film transistor substrate for display device and fabricating method thereof 有权
    用于显示装置的薄膜晶体管基板及其制造方法

    公开(公告)号：US07488632B2

    公开(公告)日：2009-02-10

    申请号：US11713046

    申请日：2007-03-02

    申请人： Byung Chul Ahn ,  Soon Sung Yoo ,  Heung Lyul Cho

    发明人： Byung Chul Ahn ,  Soon Sung Yoo ,  Heung Lyul Cho

    IPC分类号： H01L29/15 ,  G02F1/1365

    CPC分类号： G02F1/136227 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

    摘要： A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.

    摘要翻译： 在三个掩模工艺中制造薄膜晶体管（TFT）衬底。 在第一掩模工艺中，形成栅极线和栅电极。 在第二掩模处理中，从栅极绝缘膜，未掺杂和掺杂的非晶硅层形成数据线，源电极，漏极，半导体层和与栅极线重叠的第一上部存储电极，以及数据 金属层。 在第三掩模处理中，通过像素区域内和外部的保护栅极绝缘膜形成像素孔，部分地去除第一上部存储电极，像素电极在像素的像素孔内接触漏电极的一侧 并且第二上部存储电极接触像素区域外的像素孔中的第一上部存储电极的一侧。

    Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
    8.
    发明授权
    Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 有权
    水平电场型液晶显示装置薄膜晶体管基板及其制造方法

    公开(公告)号：US07556988B2

    公开(公告)日：2009-07-07

    申请号：US11345370

    申请日：2006-02-02

    申请人： Byung Chul Ahn ,  Oh Nam Kwon ,  Heung Lyul Cho

    发明人： Byung Chul Ahn ,  Oh Nam Kwon ,  Heung Lyul Cho

    IPC分类号： H01L21/82

    CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/1288

    摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.

    摘要翻译： 水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

    Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
    9.
    发明授权
    Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 失效
    水平电场型液晶显示装置薄膜晶体管基板及其制造方法

    公开(公告)号：US07749823B2

    公开(公告)日：2010-07-06

    申请号：US12475130

    申请日：2009-05-29

    申请人： Byung Chul Ahn ,  Oh Nam Kwon ,  Heung Lyul Cho

    发明人： Byung Chul Ahn ,  Oh Nam Kwon ,  Heung Lyul Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/1288

    摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.

    摘要翻译： 水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。