公开(公告)号：US20190241587A1

公开(公告)日：2019-08-08

申请号：US16384178

申请日：2019-04-15

Applicant: California Institute Of Technology

Inventor： Anton Toutov ,  Kerry Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/18 ,  C07F7/08 ,  C07F7/21 ,  C07D235/08

CPC classification number: C07F7/1804 ,  C07D235/08 ,  C07F7/0896 ,  C07F7/21

Abstract: The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

公开(公告)号：US10259831B2

公开(公告)日：2019-04-16

申请号：US15219710

申请日：2016-07-26

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Anton Toutov ,  Kerry Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/21 ,  C07D235/08 ,  C07F7/18 ,  C07F7/08

Abstract: The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

公开(公告)号：US11104693B2

公开(公告)日：2021-08-31

申请号：US16384178

申请日：2019-04-15

Applicant: California Institute Of Technology

Inventor： Anton Toutov ,  Kerry Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/21 ,  C07D235/08 ,  C07F7/18 ,  C07F7/08

Abstract: The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

公开(公告)号：US20200377528A1

公开(公告)日：2020-12-03

申请号：US16997226

申请日：2020-08-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.

公开(公告)号：US20210363164A1

公开(公告)日：2021-11-25

申请号：US17378960

申请日：2021-07-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/18 ,  C07F7/21 ,  C07D235/08 ,  C07F7/08

Abstract: The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

公开(公告)号：US20190218232A1

公开(公告)日：2019-07-18

申请号：US16244637

申请日：2019-01-10

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

CPC classification number: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane or hydrosiloxane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.

公开(公告)号：US11773116B2

公开(公告)日：2023-10-03

申请号：US17192129

申请日：2021-03-04

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

CPC classification number: C07F7/10

Abstract: The present disclosure is directed to hydrosilyl amines and fluorosilyl amines and methods of making the same.

公开(公告)号：US20210198291A1

公开(公告)日：2021-07-01

申请号：US17192129

申请日：2021-03-04

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed to hydrosilyl amines and fluorosilyl amines and methods of making the same.

公开(公告)号：US10995105B2

公开(公告)日：2021-05-04

申请号：US16997226

申请日：2020-08-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.

公开(公告)号：US10781221B2

公开(公告)日：2020-09-22

申请号：US16244637

申请日：2019-01-10

Applicant: California Institute of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane or hydrosiloxane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.