公开(公告)号：US20150107516A1

公开(公告)日：2015-04-23

申请号：US14501300

申请日：2014-09-30

Applicant: CANON ANELVA CORPORATION

Inventor： Koji TSUNEKAWA ,  Yoshinori NAGAMINE ,  Daisuke NAKAJIMA

IPC: H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/32458 ,  H01J37/32651 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/3405 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748

Abstract: In a substrate treatment system including multiple treatment chambers around a substrate transfer chamber, an increase in apparatus floor area due to installation of additional treatment chambers is reduced. A plasma treatment apparatus according to one embodiment of the present invention includes: a treatment chamber; a substrate holder for holding the substrate; plasma generation unit for forming plasma; multiple gate valves for installation and removal of the substrate; a shield for surrounding the plasma formed by the plasma generation unit; and substrate transfer unit for transferring the substrate through the gate valves. The substrate transfer unit is shielded from the plasma by the shield.

Abstract translation: 在包括在基板传送室周围的多个处理室的基板处理系统中，减少了由于安装附加的处理室而导致的设备底板面积的增加。 根据本发明的一个实施例的等离子体处理装置包括：处理室; 用于保持基板的基板保持器; 用于形成等离子体的等离子体发生单元; 用于安装和移除基板的多个闸阀; 用于围绕由等离子体产生单元形成的等离子体的屏蔽; 以及用于通过闸阀传送衬底的衬底转移单元。 衬底转印单元通过屏蔽件与等离子体屏蔽。