公开(公告)号：US20170202077A1

公开(公告)日：2017-07-13

申请号：US15395200

申请日：2016-12-30

Applicant: CANON ANELVA CORPORATION

Inventor： Masahiro ATSUMI ,  Hidekazu NISHIMURA ,  Masahiro SHIBAMOTO ,  Hiroshi YAKUSHIJI

IPC: H05H1/10 ,  C23C16/50 ,  C23C16/458 ,  H05H1/48

CPC classification number: H05H1/10 ,  C23C14/0605 ,  C23C14/325 ,  C23C14/564 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32055 ,  H05H1/48

Abstract: A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to the target, an anode to which a positive potential is applied, and a capture for capturing droplets from the target. The anode has an opening, and the capture is arranged in the opening.

公开(公告)号：US20160232932A1

公开(公告)日：2016-08-11

申请号：US15131084

申请日：2016-04-18

Applicant: CANON ANELVA CORPORATION

Inventor： Hiroshi YAKUSHIJI ,  Masahiro SHIBAMOTO

IPC: G11B5/84 ,  C23C14/24

CPC classification number: G11B5/8408 ,  C23C14/0605 ,  C23C14/24 ,  C23C14/325

Abstract: A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.

Abstract translation: 具有用于保护形成在基板上的磁记录层的表面保护层的磁记录介质的真空处理方法包括在磁记录层上形成ta-C膜的ta-C膜形成步骤，输送步骤 其上形成有ta-C膜的基板，通过激发处理气体产生自由基的自由基产生步骤，以及用自由基照射ta-C膜的表面的自由基处理步骤。

公开(公告)号：US20140174355A1

公开(公告)日：2014-06-26

申请号：US14107005

申请日：2013-12-16

Applicant: CANON ANELVA CORPORATION

Inventor： Hiroshi YAKUSHIJI ,  Masahiro SHIBAMOTO ,  Kazuto YAMANAKA ,  Shogo HIRAMATSU ,  Susumu KARINO

IPC: C23C16/50

CPC classification number: C23C14/568 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/509 ,  G11B5/85

Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.

Abstract translation: 在本发明的一个实施例中，用于在磁性膜上形成碳保护膜的保护膜形成室包括：将源气体引入真空容器的气体导入部; 放电电极，其在与被输送到所述真空容器中的预定位置的衬底相对的位置处具有放电表面; 等离子体形成部，其在所述放电面与被输送到所述规定位置的所述基板之间施加电压; 永磁体设置在排出表面的背面，并且具有第一磁体和第二磁体，第一磁体和第二磁体设置成使得它们的面对排出表面的磁极彼此相反; 以及与排放表面平行地设置并覆盖围绕面对永磁体的部分的排出表面的区域的无腐蚀部分掩模。

公开(公告)号：US20200273672A1

公开(公告)日：2020-08-27

申请号：US16871863

申请日：2020-05-11

Applicant: CANON ANELVA CORPORATION

Inventor： Hiroshi YAKUSHIJI ,  Yuto WATANABE ,  Masahiro SHIBAMOTO

IPC: H01J37/32 ,  H01J37/147 ,  H05H1/50

Abstract: A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.