公开(公告)号：US20140174355A1

公开(公告)日：2014-06-26

申请号：US14107005

申请日：2013-12-16

Applicant: CANON ANELVA CORPORATION

Inventor： Hiroshi YAKUSHIJI ,  Masahiro SHIBAMOTO ,  Kazuto YAMANAKA ,  Shogo HIRAMATSU ,  Susumu KARINO

IPC: C23C16/50

CPC classification number: C23C14/568 ,  C23C16/26 ,  C23C16/4401 ,  C23C16/509 ,  G11B5/85

Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.

Abstract translation: 在本发明的一个实施例中，用于在磁性膜上形成碳保护膜的保护膜形成室包括：将源气体引入真空容器的气体导入部; 放电电极，其在与被输送到所述真空容器中的预定位置的衬底相对的位置处具有放电表面; 等离子体形成部，其在所述放电面与被输送到所述规定位置的所述基板之间施加电压; 永磁体设置在排出表面的背面，并且具有第一磁体和第二磁体，第一磁体和第二磁体设置成使得它们的面对排出表面的磁极彼此相反; 以及与排放表面平行地设置并覆盖围绕面对永磁体的部分的排出表面的区域的无腐蚀部分掩模。

公开(公告)号：US20150348579A1

公开(公告)日：2015-12-03

申请号：US14655226

申请日：2013-12-18

Applicant: CANON ANELVA CORPORATION

Inventor： Hidetomo NARADATE ,  Akio SATO ,  Masahiro SHIBAMOTO ,  Kazuto YAMANAKA

IPC: G11B5/73 ,  G11B5/667 ,  G11B5/84

CPC classification number: G11B5/7325 ,  G11B5/667 ,  G11B5/84

Abstract: A magnetic recording medium having high coercivity, in which an L10-type ordered alloy with a high magnetic anisotropy is used in a magnetic recording layer, and a method for manufacturing the magnetic recording medium at high throughput are provided. By providing a metal base layer having a face-centered cubic structure below an orientation control layer which is for enhancing crystallinity of the magnetic recording layer that contains the ordered alloy having an L10-type structure, the magnetic recording layer that has enough high coercivity even in the case of reducing a thickness of the orientation control layer can be deposited, and the thickness of the orientation control layer that is mainly made of oxide can be reduced, whereby the throughput can be improved.

Abstract translation: 提供了具有高矫顽力的磁记录介质，其中在磁记录层中使用具有高磁各向异性的L10型有序合金，并且提供了一种以高通量制造磁记录介质的方法。 通过在取向控制层的下方提供具有面心立方结构的金属基层，该取向控制层用于提高包含具有L10型结构的有序合金的磁记录层的结晶度，该磁记录层即使具有足够高的矫顽力 在降低取向控制层的厚度的情况下，能够减少主要由氧化物构成的取向控制层的厚度，能够提高生产量。

公开(公告)号：US20130269607A1

公开(公告)日：2013-10-17

申请号：US13911293

申请日：2013-06-06

Applicant: CANON ANELVA CORPORATION

Inventor： Ge XU ,  Kazuto YAMANAKA ,  Tsutomu HIROISHI ,  Shogo HIRAMATSU

IPC: C23C16/50

CPC classification number: C23C16/513 ,  C23C16/0209 ,  C23C16/04 ,  C23C16/27 ,  C23C16/46 ,  C23C16/48 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3266

Abstract: The present invention provides a plasma CVD apparatus capable of performing film formation while controlling the temperature of a substrate as well as film properties. A process chamber according to one embodiment of the present invention includes a holder configured to hold a substrate, magnetic-field producing means configured to produce magnetic fields inside the process chamber, shields configured to suppress film deposition on the magnetic-field producing means, heat dissipating sheets configured to suppress heating of the magnetic-field producing means, and moving means configured to move the magnetic-field producing means. The magnetic-field producing means is characterized in being moved in such a direction as to increase or decrease the volume of a space between the magnetic-field producing means and the holder.

Abstract translation: 本发明提供能够在控制基板的温度以及膜特性的同时进行成膜的等离子体CVD装置。 根据本发明的一个实施例的处理室包括：保持器，其被配置为保持基板;磁场产生装置，被配置为在处理室内产生磁场;屏蔽件，被配置为抑制磁场产生装置上的膜沉积，热量 散热板，其被构造成抑制磁场产生装置的加热;以及移动装置，被配置为移动该磁场产生装置。 磁场产生装置的特征在于沿着增大或减小磁场产生装置和保持器之间的空间的体积的方向移动。

公开(公告)号：US20130273263A1

公开(公告)日：2013-10-17

申请号：US13914837

申请日：2013-06-11

Applicant: CANON ANELVA CORPORATION

Inventor： Ge XU ,  Kazuto YAMANAKA ,  Tsutomu HIROISHI ,  Shogo HIRAMATSU

IPC: C23C16/50

CPC classification number: C23C16/513 ,  C23C16/0209 ,  C23C16/04 ,  C23C16/27 ,  C23C16/46 ,  C23C16/48 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3266

Abstract: The objective of the present invention is to provide a plasma CVD apparatus capable of improving the speed of carbon film deposition onto a substrate to be processed, decreasing the cleaning frequency by reducing deposition on members other than the substrate to be processed, and being manufactured inexpensively. One embodiment of the present invention is a CVD apparatus including a vacuum vessel, magnetic-field producing means for producing a magnetic field inside the vacuum vessel, plasma producing means for producing a plasma inside the vacuum vessel, and a substrate holder configured to hold a substrate inside the vacuum vessel, and the plasma producing means has an electrode provided inside the substrate holder and a power source configured to apply voltage to the electrode.

Abstract translation: 本发明的目的是提供一种等离子体CVD装置，其能够提高碳膜在待处理基板上的沉积速度，通过减少除了待处理基板以外的部件上的沉积而降低清洗频率，并且廉价地制造 。 本发明的一个实施方案是一种CVD设备，其包括真空容器，用于在真空容器内产生磁场的磁场产生装置，用于在真空容器内产生等离子体的等离子体产生装置，以及基板保持器， 基板，并且等离子体产生装置具有设置在基板支架内部的电极和被配置为向电极施加电压的电源。