公开(公告)号：US10546720B2

公开(公告)日：2020-01-28

申请号：US15962345

申请日：2018-04-25

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Kodaira ,  Isao Takeuchi ,  Mihoko Nakamura

IPC: H01J37/30 ,  H01J37/305 ,  H01L23/544 ,  H01L21/687 ,  H01J37/32 ,  H01L43/12

Abstract: The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.

公开(公告)号：US09773973B2

公开(公告)日：2017-09-26

申请号：US14646443

申请日：2013-11-14

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Kodaira ,  Isao Takeuchi ,  Mihoko Nakamura

IPC: H01L21/3065 ,  H01L43/12 ,  H01J37/305

CPC classification number: H01L43/12 ,  H01J37/3056 ,  H01J2237/20214 ,  H01J2237/304 ,  H01L21/3065

Abstract: A production process in which in an element isolation process for a magnetoresistive effect element, a re-deposited film adhered to a side wall of the element is efficiently removed by ion beam etching. Ion beam etching is performed while a substrate located being inclined relative to the grid is rotated. In the ion beam etching, an energy amount of an ion beam entering from a direction in which a pattern groove formed on the substrate extends is increased larger than the energy amount of the ion beam entering from another direction by controlling a rotation speed of the substrate, and the re-deposited film adhered to the side wall of the magnetoresistive effect element formed on the substrate is efficiently removed by etching.

公开(公告)号：US09984854B2

公开(公告)日：2018-05-29

申请号：US14563401

申请日：2014-12-08

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Kodaira ,  Isao Takeuchi ,  Mihoko Nakamura

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/32 ,  H01L23/544 ,  H01L21/687 ,  H01L43/12

CPC classification number: H01J37/3056 ,  H01J37/32357 ,  H01J2237/3345 ,  H01J2237/3347 ,  H01L21/68764 ,  H01L23/544 ,  H01L43/12 ,  H01L2223/54426 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.