-
公开(公告)号：US11527580B2
公开(公告)日：2022-12-13
申请号：US17102176
申请日：2020-11-23
发明人： Norihiko Nakata
IPC分类号： H01L27/32 , F21V3/00 , F21S43/145 , F21S43/20 , H04N5/232 , G06F3/01 , H01L51/52 , F21Y115/15 , G02B5/20
摘要： A semiconductor device includes a first substrate, a semiconductor device includes a first substrate, a color filter layer over the first substrate in an effective pixel region, a second substrate over the color filter layer, a joint member joining the first and second substrates, and a pattern layer over the first substrate outside the effective pixel region. The color filter layer has a color filter material and the pattern layer has the color filter material. In a planar view with respect to a surface of the first substrate on which the joint member is disposed, the pattern layer is disposed between two portions of the joint member, the two portions being separate from and adjacent to each other. In the planar view, the joint member is not disposed between the pattern layer and an end of the first substrate closest to the pattern layer among ends of the first substrate.
-
公开(公告)号：US20210408448A1
公开(公告)日：2021-12-30
申请号：US17345820
申请日：2021-06-11
发明人： Hidemasa Oshige , Norihiko Nakata
摘要： A display apparatus includes a display device and a light transmission plate overlapping the display device. The display device has a display region. A void is provided between the display region and the light transmission plate. Between the display region and the light transmission plate, a distance G from a front surface of the display device facing the void to a main surface of the light transmission plate facing the void is greater than a height difference H of the front surface in the display region. The height difference H is greater than 1 μm.
-
公开(公告)号：US20210167133A1
公开(公告)日：2021-06-03
申请号：US17102176
申请日：2020-11-23
发明人： Norihiko Nakata
摘要： A semiconductor device includes a first substrate, a semiconductor device includes a first substrate, a color filter layer over the first substrate in an effective pixel region, a second substrate over the color filter layer, a joint member joining the first and second substrates, and a pattern layer over the first substrate outside the effective pixel region. The color filter layer has a color filter material and the pattern layer has the color filter material. In a planar view with respect to a surface of the first substrate on which the joint member is disposed, the pattern layer is disposed between two portions of the joint member, the two portions being separate from and adjacent to each other. In the planar view, the joint member is not disposed between the pattern layer and an end of the first substrate closest to the pattern layer among ends of the first substrate.
-
公开(公告)号：US20160204068A1
公开(公告)日：2016-07-14
申请号：US14967815
申请日：2015-12-14
发明人： Koji Hara , Nobutaka Ukigaya , Takeshi Aoki , Yasuhiro Kawabata , Junya Tamaki , Norihiko Nakata , Satoshi Ogawa
IPC分类号： H01L23/532 , H01L21/3213 , H01L23/528 , H01L21/027 , H01L21/768 , H01L21/033 , H01L21/02
CPC分类号： H01L23/53223 , H01L21/02068 , H01L21/0276 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32135 , H01L21/32136 , H01L21/32138 , H01L21/32139 , H01L21/76834 , H01L21/76865 , H01L21/76885 , H01L21/76892 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.
摘要翻译： 一种方法包括形成包括主要包含铝的导电层和形成在其上的阻挡金属层的多层膜，在阻挡金属层上形成硬掩模层，在硬掩模层上图案化抗蚀剂，将硬掩模层图案化干 用图案化的抗蚀剂作为掩模蚀刻硬掩模层，在图案化硬掩模层之后用清洁溶液清洁阻挡金属层的表面，并用图案化的硬掩模层作为掩模干蚀刻多层膜 清洗后的屏障金属层的表面。 在图案化硬掩模层时，在阻挡金属层暴露于该掩模层的状态下，以氧化气体的流量与处理气体的总流量的比率小于1％进行干法蚀刻 工艺气体。
-
公开(公告)号：US20210305324A1
公开(公告)日：2021-09-30
申请号：US17205170
申请日：2021-03-18
发明人： Yoshihisa Kawamura , Hideki Ina , Yuto Nozaki , Yusuke Todo , Atsushi Kanome , Norihiko Nakata , Toru Eto
摘要： A color filter array is provided. The array comprises a first color filter, a second color filter, and a third color filter that are arranged on a base member and respectively have different colors. The first color filter and the third color filter are arranged adjacent to each other, the second color filter includes a portion placed between an end portion of the third color filter and the base member, and the end portion of the third color filter and the portion of the second color filter are in contact with the first color filter.
-
公开(公告)号：US11121160B2
公开(公告)日：2021-09-14
申请号：US16601888
申请日：2019-10-15
发明人： Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Takuya Hara , Keita Torii , Yukinobu Suzuki , Tomoyuki Tezuka , Norihiko Nakata , Daichi Seto , Kenji Togo
IPC分类号： H01L27/146
摘要： Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.
-
7.发明授权公开(公告)号：US09627319B2
公开(公告)日：2017-04-18
申请号：US14967815
申请日：2015-12-14
发明人： Koji Hara , Nobutaka Ukigaya , Takeshi Aoki , Yasuhiro Kawabata , Junya Tamaki , Norihiko Nakata , Satoshi Ogawa
IPC分类号： H01L21/3213 , H01L23/532 , H01L21/02 , H01L21/027 , H01L21/033 , H01L21/768 , H01L23/528
CPC分类号： H01L23/53223 , H01L21/02068 , H01L21/0276 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32135 , H01L21/32136 , H01L21/32138 , H01L21/32139 , H01L21/76834 , H01L21/76865 , H01L21/76885 , H01L21/76892 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.015 秒)
