公开(公告)号：US10153153B2

公开(公告)日：2018-12-11

申请号：US15456759

申请日：2017-03-13

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Akiou Kikuchi ,  Masanori Watari ,  Kenji Kameda ,  Shin Hiyama ,  Yasutoshi Tsubota

IPC分类号： H01L21/02 ,  H01L21/3065 ,  B08B5/00 ,  B08B9/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L31/18

摘要： An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

公开(公告)号：US09676626B2

公开(公告)日：2017-06-13

申请号：US14444020

申请日：2014-07-28

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Akiou Kikuchi ,  Masanori Watari

IPC分类号： C01B7/24 ,  B01J19/24

CPC分类号： C01B7/24 ,  B01J19/2415 ,  B01J2219/24

摘要： An IF7-derived iodine fluoride compound recovery method includes putting gas containing IF7 into contact with a material to be fluorinated, thereby converting the IF7 into IF5; and cooling gas containing the IF5, thereby trapping the IF5 as an IF7-derived iodine fluoride compound. The recovered IF5 may be reacted with fluorine to generate IF7, which may be reused for a semiconductor production process.

公开(公告)号：US10121647B2

公开(公告)日：2018-11-06

申请号：US15456759

申请日：2017-03-13

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Akiou Kikuchi ,  Masanori Watari ,  Kenji Kameda ,  Shin Hiyama ,  Yasutoshi Tsubota

IPC分类号： H01L21/02 ,  H01L21/3065 ,  B08B5/00 ,  B08B9/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L31/18

摘要： An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

公开(公告)号：US20170200602A1

公开(公告)日：2017-07-13

申请号：US15456759

申请日：2017-03-13

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Akiou KIKUCHI ,  Masanori Watari ,  Kenji Kameda ,  Shin Hiyama ,  Yasutoshi Tsubota

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L31/18 ,  H01L21/3213

CPC分类号： H01L21/02076 ,  B08B5/00 ,  B08B9/00 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67017 ,  H01L21/67069 ,  H01L31/18

摘要： An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

公开(公告)号：US09524877B2

公开(公告)日：2016-12-20

申请号：US14765413

申请日：2014-01-24

申请人： Central Glass Company, Limited

发明人： Akiou Kikuchi ,  Isamu Mori ,  Masanori Watari

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/3065

摘要： A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution.

摘要翻译： 根据本发明的干法蚀刻方法是在加工室中蚀刻作为加工对象的硅层，其特征在于，在66kPa〜0.5MPa的供给压力下，从气体供给源供给含有七氟化钼的蚀刻气体， 将处理室排出到低于蚀刻气体的供给压力的内部压力，并且在将蚀刻气体保持在供给压力的同时，将蚀刻气体导入真空处理室，以通过蚀刻气体蚀刻硅层。 通过这种干式蚀刻方法，可以在温和的压力条件下绝热膨胀蚀刻气体来蚀刻硅，而不用担心设备负荷和设备成本增加，并达到良好的面内蚀刻量分布均匀性。