公开(公告)号：US12057318B2

公开(公告)日：2024-08-06

申请号：US17448885

申请日：2021-09-25

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Zhonglei Wang

IPC: H01L21/285 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/28568 ,  H01J37/32449 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method for forming a film layer includes: a substrate is provided; a pretreatment step is performed, in which the pretreatment step includes providing a reaction source gas, which forms attachment points on the substrate; and a deposition step is performed, in which the reaction source gas is formed into a plasma, which is deposited on the substrate based on the attachment points to form a first film layer.