公开(公告)号：US20080194051A1

公开(公告)日：2008-08-14

申请号：US11548647

申请日：2006-10-11

申请人： CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

发明人： CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

IPC分类号： H01L33/00 ,  H01L21/304

CPC分类号： H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US20120112163A1

公开(公告)日：2012-05-10

申请号：US13355322

申请日：2012-01-20

申请人： CHUONG ANH TRAN

发明人： CHUONG ANH TRAN

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/12 ,  H01L33/0062 ,  H01L2933/0091

摘要： A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.

摘要翻译： 提供了由SixNy层制造的发光二极管（LED）结构，其负责从LED的表面提供增加的光提取。 与没有SixNy层制造的传统LED结构相比，用SixNy层制造的这种LED结构可能具有增加的发光效率。 还提供了用于制造这种LED结构的方法。

公开(公告)号：US20080274572A1

公开(公告)日：2008-11-06

申请号：US11744717

申请日：2007-05-04

申请人： CHUONG ANH TRAN

发明人： CHUONG ANH TRAN

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/007

摘要： A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.

摘要翻译： 提供了与传统的AlInGaN或AlGaN LED结构相比，制造由AlInGaN或AlGaN组成的紫外（UV）垂直发光二极管（VLED）结构具有更高的晶体质量和更快的生长速率的方法。 这可以通过在载体衬底上形成牺牲GaN层，然后在牺牲GaN层上方沉积发光二极管（LED）堆叠来实现。 然后可以在随后的处理步骤中去除牺牲GaN层。