公开(公告)号：US20130026491A1

公开(公告)日：2013-01-31

申请号：US13241563

申请日：2011-09-23

申请人： CHENG-HUNG CHEN ,  DER-LIN HSIA ,  CHIA-HUNG HOU

发明人： CHENG-HUNG CHEN ,  DER-LIN HSIA ,  CHIA-HUNG HOU

IPC分类号： H01L33/02 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20

摘要： The present invention discloses a LED structure and a method for manufacturing the LED structure. The LED structure includes a substrate, a reflection layer, a first conducting layer, a light emitting layer, and a second conducting layer. The substrate has a plurality of grooves, and the reflection layer is disposed inside the plurality of grooves. The reflection layer is formed as a reflection block inside each of the grooves. The first conducting layer is disposed on the substrate, that is, the reflection layer is disposed between the first conducting layer and the substrate. The light emitting layer and the second conducting layer are sequentially disposed on the first conducting layer. The light emitting layer generates light when a current pass through the light emitting layer. Accordingly, the light generated by the light emitting layer can be emitted to the same side of the LED structure.

摘要翻译： 本发明公开了一种LED结构及其制造方法。 LED结构包括基板，反射层，第一导电层，发光层和第二导电层。 基板具有多个槽，反射层配置在多个槽内。 反射层在每个槽内形成为反射块。 第一导电层设置在基板上，即，反射层设置在第一导电层和基板之间。 发光层和第二导电层依次设置在第一导电层上。 当电流通过发光层时，发光层产生光。 因此，由发光层产生的光可以发射到LED结构的同一侧。

公开(公告)号：US20130032776A1

公开(公告)日：2013-02-07

申请号：US13241585

申请日：2011-09-23

申请人： CHENG-HUNG CHEN

发明人： CHENG-HUNG CHEN

IPC分类号： H01L33/04

CPC分类号： H01L33/145 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016

摘要： A light emitting diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N type semiconductor layer, and active layer, a P type semiconductor layer, a current diffusion layer, and a metal electrode. The metal ions of the P type semiconductor layer may bond with hydrogen after process thermal annealing, and metal hydride may be generated. The metal hydride may be directly formed on the surface of the P type semiconductor layer and may be used as the current blocking layer. Since the metal hydride may be directly formed on the surface of the P type semiconductor layer, its structure is flat, which resolve the problem having the electrodes peeled off from the solder wire.

摘要翻译： 公开了一种发光二极管结构及其制造方法。 该结构包括衬底，N型半导体层和有源层，P型半导体层，电流扩散层和金属电极。 P型半导体层的金属离子可以在工艺热退火后与氢结合，可能产生金属氢化物。 金属氢化物可以直接形成在P型半导体层的表面上，并且可以用作电流阻挡层。 由于金属氢化物可以直接形成在P型半导体层的表面上，所以其结构是平坦的，这解决了电极从焊丝剥离的问题。